Dilute Source Vertical Organic Light Emitting Transistor for High Drive Currents
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Solution Overview
Problem
Existing display technologies face challenges in achieving high drive currents for organic light-emitting diodes (OLEDs) while maintaining low power consumption and high manufacturing efficiency, as polycrystalline silicon-based thin film transistors are costly and non-uniform, and organic semiconductor materials fail to match the output currents of poly-Si TFTs.
Innovation Solution
The development of a dilute source-enabled vertical organic light emitting transistor (DS-VOLET) that integrates the driving transistor and storage capacitor within its structure, utilizing a dilute carbon nanotube network as the source electrode to achieve high drive currents without the need for high-resolution patterning, thereby reducing manufacturing costs and increasing the light emitting area.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If polycrystalline silicon-based thin film transistors are used to achieve high drive currents, then the output current is improved, but the manufacturing cost increases and uniformity deteriorates
Solution Approach 1:
The patent changes the material parameter from polycrystalline silicon to organic semiconductor materials, enabling the transistor to achieve high drive currents while being compatible with low-cost manufacturing processes and maintaining uniformity through solution-based fabrication methods
Solution Approach 2:
The patent employs composite material structures including organic semiconductor layers combined with specific electrode materials and encapsulation layers, creating a hybrid system that delivers both high performance and manufacturing efficiency
2Area of stationary object
If conventional lateral TFT structure is used, then the device structure is simple, but the light emitting area is reduced and aperture ratio deteriorates
Solution Approach 1:
The patent transitions from a conventional lateral (planar) TFT structure to a vertical TFT architecture, stacking the source, drain, and active layer vertically to enable the light emitting diode to occupy the horizontal plane, thereby maximizing the light emitting area and aperture ratio
Solution Approach 2:
The patent merges the driving transistor and storage capacitor into a single integrated vertical structure, where the transistor's gate structure simultaneously serves as the capacitor electrode, reducing device complexity while maximizing the light emitting area
3Manufacturing precision
If high-resolution patterning is used to achieve precise device fabrication, then the manufacturing precision is improved, but the manufacturing cost and complexity increase
Solution Approach 1:
The patent changes the fabrication approach from requiring high-resolution photolithographic patterning to using solution-based deposition methods with self-organizing materials, achieving precise device structures through material properties rather than complex patterning processes
Solution Approach 2:
The patent employs materials and processes that self-organize during fabrication, such as solution-cast organic semiconductor layers that automatically form uniform films and defined structures, eliminating the need for high-resolution external patterning tools
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The DS-VOLET design allows for high drive currents comparable to poly-Si TFTs while reducing power consumption and manufacturing costs, with improved aperture ratio and switching speed, enabling efficient operation of OLEDs with increased light emitting area and extended device lifetime.
Implementation Method 1
vertical organic light emitting transistor (DS-VOLET) that integrates the driving transistor and storage capacitor within its structure, utilizing a dilute carbon nanotube network as the source electrode to achieve high drive currents
Data Source
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AI summary
Various embodiments are provided for dilute source enabled vertical organic light emitting transistors. In various embodiments, a display panel includes an array of pixels. In one embodiment, among others, at least one pixel includes a switching transistor and a driving transistor coupled to the switching transistor, where the driving transistor is configured to emit light responsive to activation by the switching transistor. The driving transistor may be a dilute source enabled vertical organic light emitting transistor (DS- VOLET). The switching transistor may include a dilute source enabled vertical-field effect transistor (DS-VFET). In another embodiment, a double dilute source enabled vertical-field effect transistor (DS-VFET) includes a first DS-VFET coupled to a second DS-VFET.