Charged Particle Beam Pattern Measurement for DSA Lithography
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for pattern measurement in self-organization lithography using charged particle radiation devices face challenges in obtaining high contrast images and setting proper device parameters, especially when patterns have flat surfaces or no irregularities, making it difficult to precisely measure or inspect fine patterns formed by directed self-assembly techniques.
Innovation Solution
A method involving the use of a charged particle radiation device with a scanning deflector and detector to radiate a charged particle beam onto a polymer compound, allowing for precise measurement by contracting a specific polymer and adjusting scanning parameters based on image evaluation until predetermined parameters are met, thereby enhancing contrast and accuracy.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If a charged particle beam is used to observe patterns formed by DSA technique, then pattern dimensions can be measured, but contrast cannot be sufficiently obtained when the polymer compound has a flat surface
Solution Approach 1:
The patent applies preliminary action by performing surface treatment (such as plasma treatment, oxygen treatment, or UV irradiation) on the polymer compound before observation. This预处理 modifies the surface properties to enhance secondary electron emission, thereby improving image contrast without affecting the underlying pattern structure that needs to be measured
Solution Approach 2:
The patent changes physical parameters of the polymer surface through controlled treatments (plasma power, treatment time, temperature, etc.). These parameter changes modify surface characteristics such as roughness, charge state, and electron emission properties, enabling sufficient contrast for measurement while maintaining pattern integrity
2Measurement precision
If multiple image data items are integrated to improve measurement accuracy, then pattern recognition precision is enhanced, but the number of required frames and measurement time increase
Solution Approach 1:
The patent implements feedback by automatically evaluating pattern recognition results after each integration step. The system monitors recognition accuracy and stops integration when predetermined criteria are met, preventing unnecessary additional frames and reducing measurement time while maintaining required precision
Solution Approach 2:
The patent replaces manual determination of integration frame numbers with automated pattern recognition algorithms. The system automatically evaluates whether sufficient frames have been integrated based on pattern detection quality, eliminating time-consuming manual assessment and enabling efficient optimization of measurement parameters
3Productivity
If device parameters are set in advance for pattern measurement, then measurement efficiency is improved, but it is difficult to determine proper parameters when patterns have no irregularities
Solution Approach 1:
The patent applies self-service by enabling the measurement system to automatically determine optimal device parameters based on real-time evaluation of pattern recognition results. The system self-adjusts parameters such as beam current, scanning speed, and integration frame number without requiring manual intervention, making the process efficient and accessible even for users without expert knowledge
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables very precise measurement and inspection of patterns with high contrast signals even when patterns have flat surfaces or no irregularities, improving the accuracy and efficiency of pattern evaluation in semiconductor manufacturing processes.
Implementation Method 1
A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound
Implementation Method 2
PTL 1 discloses an example in which patterns formed by means of the DSA technique are observed through a scanning electron microscope
Data Source
AI summary
An object of the present invention is to provide a method for pattern measurement and a charged particle radiation device in which a pattern formed by using a DSA technique can be very precisely measured and inspected. According to an aspect for achieving the object, a method for pattern measurement or a charged particle radiation device for realizing the measurement is proposed as follows. A charged particle is radiated to a polymer compound used for a self-organization lithography technique, and a specific polymer is considerably contracted as compared to the other polymer among multiple polymers forming the polymer compound. Thereafter, dimensions between multiple edges of the other polymer are measured, based on a signal obtained by scanning a region including the other polymer with the charged particle beam.