Electric Discharge Tubes TRIZ Cases

A coating system uses a negatively charged isolation shield to confine plasma for versatile deposition.

Separation grid filters ions while gas ports inject neutral particles to improve radial uniformity.

Pillared electrodes with bonding connections reduce cross-talk between apertures by shielding stray fields.

A charged particle beam device uses a movable detection surface to maintain constant distance from the sample.

An elastic clip system fastens samples to a universal support section, preventing equipment cost increases during cross-apparatus transfers.

Remote plasma etching combines fluorine and oxygen precursors with water vapor to achieve high selectivity between silicon oxide and nitride.

Distinct beam foci enable single-scan parameter optimization, reducing contamination from auxiliary beams while maintaining high throughput.

Thermal conductive means bridge shielding plates to cooled chamber walls.

Grooved tongue retention features secure high-density terminals within a connector housing structure.

Dual electron mirrors correct spherical and chromatic aberrations, resolving resolution limits caused by magnetic deflector dispersion.

A charged particle radiation device measures polymer compound patterns using beam scanning and detector signals.

Vaporizing aromatic carbon molecules creates plasma for ion beam extraction, reducing beam transmission losses while maintaining precise energy control.

Alternating silicon deposition and halogen etching plasma cycles prevent non-film component inclusion at the lamination interface.

A plasma cleaning system uses reactive gases to chemically remove contaminants from surfaces.

Orthogonal extending sections on plate-like legs block peel stress transmission at solder joints, preventing peeling under vertical loads.

A process kit uses an actuating mechanism to adjust a tuning ring gap, resolving substrate edge critical dimension non-uniformity.

Segmented upper and lower chambers with a lifting mechanism allow independent removal of components, reducing contamination risks during large wafer processing.

Synchronized RF substrate bias inhibits arcing on insulating surfaces while enabling faster pulse ignition and higher deposition rates in HIPIMS systems.

Serrated and sloped resonant chokes eliminate metal gasket arcing by absorbing microwaves across a frequency band.

An ionized gas supply path delivers charge-neutralizing ions to the substrate interface.

A guide member redirects purge gas to suppress reaction gas infiltration and maintain substrate temperature uniformity.

A multi-chamber sputtering apparatus enables sequential substrate transfer between deposition units.

A control apparatus adjusts irradiation positions of multiple electron beams to maintain precise alignment during exposure operations.

Spatially separating the microscopes within one vacuum chamber resolves interference, allowing large photomask inspection without breaking vacuum.

A model generation apparatus acquires measurement data from a plasma processing stage divided into multiple zones to create a prediction model.

A dynamic ion implantation apparatus adjusts wafer rotation angles and beam scanning speeds to create large-scale two-dimensional distributions.

Point-shaped electrode protrusions concentrate the local electric field to increase power conversion efficiency.

A gas-phase reactor cleaning diffuser delivers reactants to reaction chamber surfaces, reducing particle formation and enhancing film uniformity.

A control unit processes scanning directions using predetermined equations to adjust the electron beam path.

A method splits high pattern density outlier templates into subsets for targeted exposure processes.

Remote plasma excited halogen species achieve high etch selectivity for metal films relative to silicon layers without physical disturbance.

Moving the interferometer optical axis in the Z direction reduces Abbe error and thermal deformation while maintaining full measurement range.

Vertical coolant paths in the mounting table maintain pressure uniformity and vaporization temperature across the electrostatic chuck.

Inductively-coupled plasma torch uses segmented gas jetting ports to control heat influx distribution across the substrate surface.

Spectral carpet analysis generates three-dimensional intensity profiles from time-series data to predict etch depth.

Segmented chamber walls and lateral plasma sources enable tape-mounted substrate processing, resolving equipment compatibility constraints.

This filter blocks plasma particles to eliminate resist line width roughness and critical dimension differences across the wafer surface.

Automated insect surveillance replaces labor-intensive manual counting with real-time optical detection and wing beat analysis.

Counter electrode with parallel conductive surfaces reduces material sputtering in vacuum chambers.

Segmented waveguide sections concentrate electric fields while maintaining plasma stability against gas flow variations.

Dynamic multi-mode switching adjusts RF power and frequency to resolve the trade-off between adaptability and device complexity in plasma processing.

Rotating the substrate compensates for low-angle static incidence variations, ensuring uniform element shapes without enlarging the apparatus volume.

Xe+ plasma focused ion beam removes polyimide using oxygen etch-assisting gas at 8 to 14 keV, achieving thirty times faster material removal than water vapor.

A carbide interlayer stabilizes hydrogen termination on the diamond surface, preventing work function increase during ohmic contact formation.

A plasma surface treatment apparatus converts ions into a neutral beam to etch substrates without electromagnetic focusing.

A towing connector integrates a buzzer and LED circuit board within its housing to provide simultaneous audio and visual signals.

Segmented annular channels in the chamber lid assembly deliver controlled gas flow to eliminate localized thin spots on substrates.

Segmented cathodes with dynamic switching resolve contradictions between deposition rate and manufacturing precision, smoothing substrate surfaces.