Plasma Processing Apparatus Post-Plasma Gas Injection
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Solution Overview
Problem
Achieving uniformity control in plasma strip tools is challenging due to the difficulty in tuning process parameters such as gas pressure, flow, and RF power, which affects the performance of plasma processing in semiconductor wafer processing.
Innovation Solution
A plasma processing apparatus with a separation grid that filters ions and allows neutral particles to pass through, incorporating gas ports for post-plasma gas injection to control uniformity, specifically injecting gases between grid plates to manage the energy and distribution of radicals for improved radial uniformity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If process parameters such as gas pressure, flow, and RF power are manipulated to control uniformity, then uniformity control is achieved, but device complexity and difficulty of operation increase
Solution Approach 1:
The patent introduces a new controllable parameter (gas injection at the separation grid) to achieve uniformity control without manipulating existing complex parameters like RF power and gas pressure. This allows uniformity adjustment through a simpler, more direct mechanism that doesn't require changing multiple interdependent process parameters.
Solution Approach 2:
The separation grid serves as an intermediary component where gas injection directly influences the plasma neutral flux. By injecting gas at this intermediate location between the plasma chamber and processing chamber, the system can control uniformity through a localized action rather than manipulating the entire plasma generation process.
2Manufacturing precision
If process parameters such as gas pressure, flow, and RF power are manipulated to control uniformity, then uniformity control is achieved, but ease of operation deteriorates
Solution Approach 1:
The invention adds a new operational parameter (gas injection flow rate at the separation grid) that provides direct control over uniformity. This new parameter is independent of the complex interdependent parameters (RF power, gas pressure, gas flow), making the system easier to operate as uniformity can be adjusted without coordinating multiple parameters.
Solution Approach 2:
The separation grid with gas injection acts as an intermediary control point that simplifies operation. Operators can control uniformity by adjusting a single gas injection parameter rather than coordinating multiple process parameters, making the system more user-friendly and easier to optimize.
3Manufacturing precision
If gas is injected into the plasma chamber, then radical distribution is controlled, but plasma quality and productivity may deteriorate
Solution Approach 1:
The separation grid serves as an intermediary location for gas injection, allowing control of radical distribution in the processing chamber without directly injecting gas into the plasma chamber. This preserves plasma quality and productivity while achieving the desired radical distribution through the neutral flux that passes through the grid.
Solution Approach 2:
The system segments the gas injection location from the plasma generation zone. By injecting gas at the separation grid rather than in the plasma chamber, the patent separates the uniformity control function from the plasma generation function, allowing both to operate optimally without interfering with each other.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The post-plasma gas injection enables precise control over the surface treatment process, enhancing uniformity and efficiency in photoresist removal and other plasma processing tasks by adjusting the energy and distribution of radicals.
Implementation Method 1
The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber
Implementation Method 2
Plasma sources (e.g., microwave, ECR, inductive, etc.) are often used for plasma processing to produce high density plasma and reactive species for processing substrates
Data Source
AI summary
Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.