Plasma Processing Device with Segmented Gas Jetting for Temperature Uniformity
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Solution Overview
Problem
Existing plasma processing techniques face challenges in controlling the uniform distribution of heating performance along a substrate surface during high-temperature treatments, leading to inconsistent temperature uniformity, especially when performing short-period treatments.
Innovation Solution
A plasma processing device utilizing an inductively-coupled plasma torch with an annular chamber, dielectric members, gas supply pipes, and high-frequency coils, along with independent gas flow rate controllers and a rotating mechanism, allows for precise control of heat influx to the substrate through multiple gas jetting ports, ensuring uniform plasma processing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If linear thermal plasma is generated and scanning is performed in one direction, then heating can be performed independently of light absorption and treatment can be performed inexpensively, but it is difficult to control the distribution of heating performances in a linear direction and temperature uniformity is poor
Solution Approach 1:
The plasma processing device divides the heating control into multiple independent gas jetting ports arranged side by side in the linear direction. Each port can be controlled independently through separate gas supply pipes and flow rate controllers, allowing segmented control of heating performance across the substrate surface while maintaining overall temperature uniformity
Solution Approach 2:
The device employs dynamic control of gas flow rates through independently controllable gas supply pipes and flow rate controllers for each jetting port. This enables real-time adjustment of heating distribution along the linear direction, transforming the static heating problem into a dynamically controllable system that can adapt to maintain uniform temperature
2Manufacturing precision
If multiple gas jetting ports are provided side by side with independent gas supply pipes, then the distribution of heating performances can be controlled precisely, but the device complexity increases
Solution Approach 1:
The gas supply system uses universal components (gas supply pipes, flow rate controllers, jetting ports) that serve multiple functions: they deliver reactant gas for plasma generation, control heating distribution, and enable precise temperature control. This multi-functionality reduces the need for separate specialized components for each function
3Productivity
If high-temperature treatment is performed for a short period of time, then processing speed is improved, but it is difficult to achieve uniform temperature distribution across the substrate
Solution Approach 1:
The device performs preliminary distribution of reactant gas through multiple jetting ports before plasma generation occurs. By pre-positioning the gas flow patterns across all ports, the subsequent plasma heating is uniformly distributed from the start, enabling short-duration high-temperature treatment without sacrificing temperature uniformity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables stable and uniform plasma processing with controlled heat distribution, allowing for high-speed and efficient processing of electronic devices, including semiconductor film crystallization and solar cell manufacturing, by maintaining consistent temperature uniformity during both high-temperature and low-temperature treatments.
Implementation Method 1
coils (3a, 3b) arranged in the vicinity of a first ceramic block (4) and a second ceramic block (5)... A high-frequency power source (25) is connected to the coils (3a, 3b)... generating plasma by a reactant gas
Implementation Method 2
irradiating the substrate with plasma generated by a reactant gas... performing high-temperature heat treatment on the vicinity of the substrate surface
Implementation Method 3
plural gas jetting ports from which the gas is jetted toward the substrate mounting table are provided side by side in a direction of a line formed by the opening... controlling the distribution of heating performances in a linear direction
Data Source
AI summary
A plasma processing device, a plasma processing method and a manufacturing method of an electronic device with excellent uniformity, are capable of performing heating and high-speed processing for a short period of time as well as controlling the distribution of heating performances in a linear direction (amounts of heat influx to a substrate). In an inductively-coupled plasma torch unit, coils, a first ceramic block and a second ceramic block are arranged, and a chamber has an annular shape. A plasma P is applied to a substrate at an opening of the chamber. The chamber and the substrate are relatively moved in a direction perpendicular to a longitudinal direction of the opening. Plural gas jetting ports jetting a gas toward a substrate stage are provided side by side in a direction of a line formed by the opening, thereby controlling the distribution of heating performances in the linear direction and realizing plasma processing with excellent uniformity.