Ion Beam Etching Apparatus Substrate Rotation Uniformity
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Solution Overview
Problem
Ion beam etching apparatuses face challenges in achieving uniform etching on large substrates without increasing apparatus size, particularly under low-angle-incident static conditions, where nonuniformity occurs due to varying ion beam incidence angles and plasma density distribution.
Innovation Solution
An ion beam etching method and apparatus that utilize a substrate holder to adjust the tilt angle and a shutter with a movable opening portion to control the ion beam's incidence angle, ensuring uniformity by reducing the tilt angle as the ion beam's center moves away from the ion source, and adjusting the slit width and etching time to maintain consistent ion beam dispersion.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If a substrate is held static under low-angle-incident condition, then the etching process can be simplified, but the shapes of elements become nonuniform across the substrate surface
Solution Approach 1:
The patent applies dynamics by rotating the substrate during the ion beam etching process. Instead of holding the substrate static, the substrate is rotated to ensure that all regions receive a consistent effective incident angle of the ion beam, thereby achieving uniform element shapes across the entire substrate surface while maintaining a relatively simple low-angle-incident etching configuration
Solution Approach 2:
The patent changes the parameter of substrate rotation during the etching process. By introducing rotational motion, the effective incident angle of the ion beam becomes consistent across different regions of the substrate, compensating for the nonuniformity that would otherwise occur under static low-angle-incident conditions
2Manufacturing precision
If the substrate tilt angle is increased to maintain uniform incident angle across the substrate, then element shape uniformity improves, but the apparatus size increases
Solution Approach 1:
Instead of increasing the substrate tilt angle statically, the patent employs dynamic rotation of the substrate during etching. This rotational motion allows the substrate to maintain a smaller average tilt angle while still achieving uniform effective incident angles across all regions, thereby avoiding the need for a larger apparatus
3Manufacturing precision
If ion beam acceleration voltage is increased to 400 V or higher, then ion rectilinearity improves and uniform etching is achieved, but the energy consumption increases
Solution Approach 1:
The patent changes the operational parameters by using lower acceleration voltages (less than 400 V) combined with substrate rotation. This parameter combination achieves uniform etching through dynamic motion compensation rather than relying solely on high energy ions, thereby reducing energy consumption while maintaining manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables highly uniform etching on large substrates without enlarging the apparatus, improving product yield by maintaining consistent ion beam incidence angles and etching amounts across the substrate surface.
Implementation Method 1
an ion source that emits an ion beam to a substrate
Implementation Method 2
a substrate holder that holds the substrate and changes a tilt angle of the substrate with respect to the ion source
Implementation Method 3
a shutter that has an opening portion through which the ion beam passes and is capable of changing a position of the opening portion with respect to the substrate
Implementation Method 4
etching the substrate with the ion beam passing through the opening portion
Data Source
AI summary
To provide an ion beam etching method which enables a highly uniform IBE process even under a low-angle-incident static condition, without increase in the size of an apparatus. The ion beam etching method includes: changing a position of an opening portion with respect to a substrate; etching the substrate with an ion beam passing through the opening portion; and reducing a tilt angle as a center of a site where the ion beam is incident on the substrate moves away from the ion source.