Dual-Angle Electron Beam Inspection for Non-Contact Defect Detection

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Solution Overview

Problem

Existing semiconductor inspection methods risk damaging the semiconductor device during electrical failure detection due to direct contact and lack process automation and accuracy.

Innovation Solution

A semiconductor inspection apparatus and method using non-contact electron beams from obliquely and vertically oriented columns to detect secondary electrons, allowing for precise defect identification without physical contact, enabling process automation and high accuracy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a scanning electron microscope is used to inject electrons into the semiconductor device for electrical failure testing, then electrical failure detection is enabled, but the semiconductor device may be damaged during the inspection process

Engineering Contradiction:
Improveelectrical failure detection capabilityVSAvoiddevice damage risk
Core Design Contradiction:
ReliabilityVSObject-affected harmful factors

Solution Approach 1:

The inspection system is divided into two separate electron beam columns: a first column for charging the semiconductor device and a second column for detecting secondary electrons. This segmentation allows the charging function and detection function to be performed independently, preventing damage while enabling electrical failure detection.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The patent uses secondary electrons as an intermediary to detect electrical failures. Instead of directly injecting electrons into the device for testing, the system irradiates the device with electron beams to generate secondary electrons, which then carry information about electrical failures for detection. This indirect method reduces damage risk.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Reliability

If traditional contact-based inspection methods are used, then electrical failure detection is possible, but process automation is limited

Engineering Contradiction:
Improveelectrical failure detection accuracyVSAvoidprocess automation level
Core Design Contradiction:
ReliabilityVSExtent of automation

Solution Approach 1:

The patent replaces mechanical contact-based inspection methods with a non-contact electron beam-based system. The electron beams are generated and controlled through electromagnetic fields in the electron beam columns, eliminating the need for physical contact and enabling full process automation.

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

3Device complexity

If a single electron beam column is used for inspection, then device structure is simplified, but detection accuracy is reduced

Engineering Contradiction:
Improveinspection apparatus structureVSAvoiddefect detection accuracy
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The inspection apparatus uses two separate electron beam columns with different orientations (oblique and vertical angles) to provide complementary inspection perspectives. This segmentation enables more comprehensive defect detection and higher measurement precision while maintaining manageable device complexity.

Inventive Principle:
Principle #1Segmentation

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Prevents damage to semiconductor devices, facilitates automation, and enhances detection accuracy by using non-contact electron beams to identify electrical defects effectively.

Implementation Method 1

a first column configured to irradiate a first electron beam toward the semiconductor device on the stage

Methodology Applied
Scientific EffectElectron beam irradiation: Electron Beam

Implementation Method 2

a second column configured to irradiate a second electron beam toward the semiconductor device... a detector configured to detect a secondary electron generated by the second electron beam

Methodology Applied
Scientific EffectSecondary electron generation: Electron Impact Desorption

Data Source

PatentUS12362139B2Semiconductor inspection apparatus and semiconductor inspection method using the same
Publication Date: 2025.07.15 SAMSUNG ELECTRONICS CO LTD
  • US12362139B2 patent drawing
  • US12362139B2 patent drawing
  • US12362139B2 patent drawing

AI summary

Disclosed are semiconductor inspection apparatuses and methods. The semiconductor inspection apparatus comprises a stage that supports a semiconductor device, a first column that irradiates a first electron beam toward the semiconductor device on the stage, a second column that irradiates a second electron beam toward the semiconductor device, and a detector that detects a secondary electron generated by the second electron beam. The first column is disposed to make a first angle with a top surface of the semiconductor device. The second column is disposed to make a second angle with the top surface of the semiconductor device. The first angle and the second angle are different from each other.