Material Analysis Using Wave/Particle Radiation TRIZ Cases

A movable single-lens projector boosts on-axis diffraction resolution for thin samples, then retracts to preserve SEM imaging of thicker samples.

Charged particle beam gate irradiation and light-based charge reset enable probe-free transistor on/off measurement with structure-aware state control.

SEM settings are optimized from wafer stack characteristics and BSE yields to improve buried-feature overlay quality and throughput.

Combining light scattering with SIMS links wafer surface defects to their chemical makeup and the process step causing contamination.

Decelerated electrospray ions land on a cryogenic substrate below 20 eV per charge, reducing damage and improving cryo-EM sample uniformity.

A dual-target PVD approach tunes boron in FeCoB films continuously while avoiding cracking-prone high-boron FeCoB targets.

Multiple incident and azimuthal X-ray angles capture higher order scattering for precise 2D and 3D IC profile measurement without charging damage.

XPS signal ratios and SiC interface correction enable precise graphene thickness measurement on silicon substrates.

Affinity-functionalized graphene oxide cryo-EM grids keep samples away from the air-water interface to reduce denaturation and aggregation.

Non-contact dual-angle electron beams detect secondary electrons to find semiconductor electrical defects without probe damage and with higher automation.

A detection agent in the resin enables leak-free monitoring of battery module filling, improving distribution uniformity and reducing waste.

A single active pixel sensor captures imaging and crystallographic beam data at once, reducing detector swaps, drift, and registration errors.

A buried top electrode and sidewall isolation cut series resistance and leakage current, improving SEM detector speed and sensitivity.

Corner beam detection recalculates detector shift after replacement, preserving multi-beam inspection alignment precision and throughput.

Copper crystal orientation in a resin-based graphite electrode lowers internal resistance and improves lithium-ion battery discharge rate.

A shielded neutron source and detector layout maps He-3 in regolith in situ, avoiding excavation and reducing time and energy use.

A non-magnetic transmission unit isolates the MLC motor from magnetic interference while feedback-guided leaf motion preserves beam-shaping precision.

A resonator-fed CW laser with external quasi-CW input cuts nonlinear crystal heat load while sustaining short-wavelength output for faster microscopy.

Controlling the Cu[II]/Cu[I] surface oxide ratio improves copper wire bondability with less scrubbing, shortening bonding time in semiconductor assembly.

A telescopic support and detachable X-ray generator make 3D DR easier to transport while preserving stable on-site imaging.

Individual correction kernels align multi-beam secondary electron images to a reference blur, reducing false defects in pattern inspection.

Thumbnail grids, detailed views, and symbol display modes help users grasp overall sample state while reviewing many AI-analyzed images.

Combining secondary and backscattered electron images, this case measures overlay error accurately at low SNR while reducing beam exposure and frame count.

Varying electron beam landing energy reveals distinct edge patterns from buried semiconductor layers, enabling precise depth and width measurement.

A physical optical model with polynomial correction aligns sensor pixels to known emission peaks for more accurate cathodoluminescence spectra.

TEM image evaluation feeds back into FIB wafer machining conditions, improving automated thin film sample preparation accuracy.

Correcting non-uniform FIB milling distortion in stacked SEM images enables accurate 3D wafer metrology and virtual slicing.

A movable aperture array and condenser lens switch between flooding and inspection modes to limit Coulomb effects and preserve defect imaging resolution.

A diamond tapered nanostructure uses secondary electron frequency analysis to measure large analytes accurately at room temperature.

Low-energy electron diffraction with ptychography reconstructs wafer surface profiles for non-destructive defect inspection of complex semiconductor structures.

A learning machine searches stored optical and configuration data to cut charged particle beam matching time while preserving precision.

Combining XRF with Compton backscattering enables accurate high-speed sorting of aluminum, magnesium, and mixed foreign materials.

Transmission SAXS reconstructs Bragg rods to separate overlay translation and deformation defects in microelectronic control patterns.

On-site XRF with conveyor-fed core handling cuts lab transport delays while delivering repeatable, location-identified sample data.

Non-contact XRF mapping of copper current collectors enables in-line inspection of thin lithium anodes for thickness variation and defects.

A polymer-metal standard film with thickness variation of 0.50 μm or less reduces position-dependent LA-ICP-MS signal drift and improves quantitation.

A graphene grid with pre-immobilized binding agents captures scarce proteins directly on-grid, reducing loss and denaturation during cryo-EM prep.

Adaptive coincidence areas for peak and background pixels reduce counting losses and preserve weak electron diffraction peaks.

Inter-die metal layers cross dummy dicing margins to stitch oversized die portions beyond stepper exposure limits while preserving signal interconnection.