T-SAXS Overlay Metrology for Translation and Deformation Defects

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Solution Overview

Problem

Existing methods for measuring defects in microelectronic components, such as overlay defects resulting from the superposition of two networks of lines, are limited in their ability to extract information on the geometry of the control pattern beyond simple translations.

Innovation Solution

A method utilizing small-angle X-ray scattering (SAXS) techniques, specifically Critical-Dimension Small Angle X-ray Scattering (CD-SAXS) by transmission (T-SAXS), to measure defects by analyzing the spatial Fourier transform of the control pattern, allowing for the extraction of parameters such as translation angle α and deformation angle β moy.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Measurement precision

If T-SAXS technique is used to measure overlay defects, then measurement capability is improved, but the ability to extract comprehensive geometric information is limited

Engineering Contradiction:
Improveoverlay measurement capabilityVSAvoidgeometric information extraction
Core Design Contradiction:
Measurement precisionVSLoss of information

Solution Approach 1:

The patent transforms the measurement approach by moving from analyzing only the position of the main maximum (one-dimensional information) to analyzing the positions of multiple secondary maxima (multi-dimensional information). This dimensional expansion in the data analysis space enables extraction of both translation angle α and deformation angle β moy, comprehensively characterizing the overlay defect geometry.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The patent segments the diffraction pattern analysis into multiple independent components: the main maximum position provides translation information (angle α), while secondary maxima positions provide deformation information (angle β moy). This segmentation allows independent extraction of different geometric parameters from the same measurement data, resolving the information extraction limitation.

Inventive Principle:
Principle #1Segmentation

2Ease of operation

If only main maximum position is analyzed, then measurement simplicity is maintained, but measurement completeness deteriorates

Engineering Contradiction:
Improvemeasurement simplicityVSAvoiddefect characterization accuracy
Core Design Contradiction:
Ease of operationVSManufacturing precision

Solution Approach 1:

The patent applies partial action by selectively using only the necessary secondary maxima (at least one, preferably the first) for deformation measurement, while maintaining the main maximum for translation measurement. This partial use of available data achieves complete geometric characterization without requiring excessive complex analysis of all possible maxima, balancing simplicity and completeness.

Inventive Principle:
Principle #16Partial or excessive action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the precise measurement of both translation and deformation defects in microelectronic components, providing a comprehensive description of the overlay geometry and improving manufacturing quality control.

Implementation Method 1

An X-ray source S emits an X-ray beam in a direction z 0 , perpendicular to an observation plane P

Methodology Applied
Scientific EffectX-Ray: X-Ray

Implementation Method 2

The image in the observation plane P is related to the spatial Fourier transform of the control pattern Z illuminated by the incident beam

Methodology Applied
Scientific EffectDiffraction: Diffraction

Implementation Method 3

method for measuring by small angle X-ray scattering - CD-SAXS (according to the English "Critical-Dimension Small Angle X-ray Scattering") by transmission (called T-SAXS for "transmission - Small Angle X-ray Scattering")

Methodology Applied
Scientific EffectSmall Angle X-ray Scattering: Scattering

Data Source

PatentEP4421482B1Method for measuring by t-saxs a covering defect affecting a control pattern carried by a microelectronic component; associated instrument system and computer program product
Publication Date: 2025.06.11 COMMISSARIAT A LENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
  • EP4421482B1 patent drawingFigure 1
  • EP4421482B1 patent drawingFigure 2A~2B
  • EP4421482B1 patent drawingFigure 3A~3B

AI summary

This method (100) measures, by a small-angle X-ray scattering technique by transmission, a defect affecting a pattern resulting from the superposition of two line arrays carried by a microelectronic component, an xyz frame being associated with the component, the lines being oriented along the y direction and the arrays being superimposed along the z direction. This method consists of: acquiring (110) intensity measurements for a plurality of X-ray beam incidence angles; reconstructing (120), from the intensity measurements, two Bragg rods; determining (130) a translation angle from a difference between the positions according to the spatial frequency qz of the principal maxima of the two Bragg rods; and determining (140) a deformation angle from a difference between the positions according to the spatial frequency qz of the ith secondary maxima of the two Bragg rods.