Transistor Gate Beam Control for Probe-Free On/Off Measurement
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Solution Overview
Problem
Existing charged particle beam devices struggle to freely control the charged state of semiconductor devices based on their structure, making it difficult to measure on/off characteristics of transistors without electrical connections.
Innovation Solution
A charged particle beam device that controls the conductive state of transistors by irradiating the gate with a charged particle beam and initializing charges with light, allowing for precise measurement of on/off characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If a charged particle beam is used to control the charged state of a semiconductor device, then measurement of on/off characteristics can be performed without electrical probes, but it is difficult to freely control the charged state according to the device structure
Solution Approach 1:
The patent divides the charged particle beam into multiple independent beams, each capable of irradiating different regions of the semiconductor device. This segmentation allows selective control of charged states in specific areas (such as gate, source, drain) according to the device structure, resolving the contradiction between ease of operation and adaptability.
Solution Approach 2:
The patent creates a measurement system that can perform multiple functions: it can control charged states in various regions, measure on/off characteristics, and adapt to different semiconductor device structures. This multi-functionality allows the system to be versatile while maintaining ease of operation through unified beam control.
2Measurement precision
If electrical probes are used to measure on/off characteristics, then direct electrical connection is established, but the measurement process becomes more complex and requires physical contact
Solution Approach 1:
The patent replaces the mechanical/electrical probe contact system with a charged particle beam system. Instead of establishing physical electrical connections through probes, the measurement is performed by irradiating the device with charged particles and detecting the resulting signals, thereby simplifying the measurement setup while maintaining measurement precision.
3Productivity
If light is used to initialize charges in the transistor, then charges can be reset, but the control over which portions are initialized is limited
Solution Approach 1:
The patent segments the light initialization function to work in conjunction with segmented charged particle beams. By coordinating multiple independent light sources or beam paths with multiple charged particle beams, the system can selectively initialize charges in specific regions while maintaining high productivity through parallel processing.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the measurement of on/off characteristics of transistors by controlling the charged state according to the device's structure, without the need for electrical probes, enhancing measurement accuracy and efficiency.
Implementation Method 1
turns on a transistor formed on semiconductor material by irradiating a gate of the transistor with a charged particle beam
Implementation Method 2
initializes charges of the transistor by irradiating the transistor with light
Data Source
AI summary
A purpose of the invention is to control a charged portion according to a structure of a transistor formed on a semiconductor material, so as to measure on/off characteristics of the transistor by irradiation with a charged particle beam and irradiation with light. A charged particle beam device according to the invention turns on a transistor formed on a semiconductor material by irradiating a gate of the transistor with a charged particle beam, and initializes charges of the transistor by irradiating the transistor with light, thereby controlling a conductive state of the transistor (see FIG. 4).