Dual-Block Search Cells for Longer, Lower-Power In-Memory Search

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Solution Overview

Problem

Conventional ternary content addressable memory (TCAM) technologies face issues of insufficient memory density and high power consumption due to the requirement of two non-volatile memory cells per data bit, limiting the data length and search efficiency.

Innovation Solution

A memory device with a first and second memory cell block, each containing a search memory cell pair, where the cells receive distinct search voltages based on the searched data, and a sense amplifier generates a search result from the bit lines, allowing for increased data length and improved search efficiency by doubling the bits per word line.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If two non-volatile memory cells are used to store one data bit, then memory density is improved, but data length during search operation is reduced

Engineering Contradiction:
Improvememory densityVSAvoiddata length
Core Design Contradiction:
Quantity of substanceVSLength of stationary object

Solution Approach 1:

The patent divides the memory device into multiple memory cell blocks, with each block containing search memory cells that can be independently controlled. This segmentation allows different blocks to be activated based on search requirements, effectively increasing the usable data length during search operations while maintaining high memory density through the efficient use of non-volatile memory cells in each block.

Inventive Principle:
Principle #1Segmentation

2Quantity of substance

If two non-volatile memory cells are used to store one data bit, then storage capacity is improved, but power consumption increases

Engineering Contradiction:
Improvestorage capacityVSAvoidpower consumption
Core Design Contradiction:
Quantity of substanceVSUse of energy by stationary object

Solution Approach 1:

The patent applies local quality control by enabling only the necessary memory cell blocks for search operations, rather than activating all blocks. Each memory cell block has its own search memory cells that can be independently controlled, allowing the system to optimize power consumption by processing only the required portion of data while maintaining high storage capacity through the overall memory structure.

Inventive Principle:
Principle #3Local quality

3Productivity

If conventional TCAM structure is used, then search parallelism is achieved, but memory density is insufficient

Engineering Contradiction:
Improvesearch parallelismVSAvoidmemory density
Core Design Contradiction:
ProductivityVSQuantity of substance

Solution Approach 1:

The patent merges the search memory cells from multiple memory cell blocks into a unified search architecture. By combining the capabilities of multiple blocks with shared search logic and control circuits, the system achieves high search parallelism across the entire memory array while maintaining the memory density benefits of non-volatile memory cells through efficient space utilization and reduced redundancy.

Inventive Principle:
Principle #5Merging (Combining)

Data Source

PatentUS12367930B2Memory device and in-memory search method thereof
Publication Date: 2025.07.22 MACRONIX INTERNATIONAL CO LTD
  • US12367930B2 patent drawing
  • US12367930B2 patent drawing
  • US12367930B2 patent drawing

AI summary

A memory device and an in-memory search method thereof are provided. The memory device includes a first memory cell block, a second memory cell block, at least one search memory cell pair, and a sense amplifier. The search memory cell pair includes a first search memory cell and a second search memory cell. The first search memory cell and the second search memory cell are respectively disposed in the first memory cell block and the second memory cell block. The first search memory cell and the second search memory cell respectively receive a first search voltage and a second search voltage. The first search voltage and the second search voltage are generated according to searched data. The sense amplifier generates a search result according to signals on a first bit line and a second bit line.