Dual-Developer Resist Pattern Formation for ArF Lithography
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Solution Overview
Problem
Conventional pattern formation methods for semiconductor devices using ArF excimer laser exposure struggle with achieving sufficient exposure margin and resolving power due to interference between adjacent patterns, leading to inadequate optical contrast and focal depth, especially when using conventional resist compositions and developers.
Innovation Solution
A pattern forming method involving a positive resist composition whose solubility increases in a positive developer and decreases in a negative developer upon irradiation, allowing for selective dissolution and removal of exposed areas using a combination of positive and negative developers, along with a rinsing solution containing organic solvents, to enhance resolving power and precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional resist compositions and developers are used with ArF excimer laser exposure, then the process is simple and familiar, but the resolving power is insufficient and optical contrast is inadequate due to interference between adjacent patterns
Solution Approach 1:
The development process is segmented into two distinct steps: first development with a positive developer to remove exposed areas, and second development with a negative developer to remove unexposed areas. This segmentation allows each developer to work optimally without interference, thereby achieving high resolving power and optical contrast that cannot be obtained with a single developer system
Solution Approach 2:
The invention changes the chemical parameters of the resist composition by incorporating specific compounds (compounds of formula (1) and (2)) that enable dual solubility behavior. These parameter changes in the resist chemistry allow the material to respond differently to positive and negative developers, enabling the segmented development approach to achieve superior pattern formation
2Manufacturing precision
If conventional single-developer methods are used, then the process is straightforward, but the exposure margin is insufficient and pattern distortion occurs
Solution Approach 1:
By dividing the development into two sequential steps with different developer chemistries, the process achieves precise pattern formation with minimal distortion. The first development step selectively removes exposed regions while the second step removes unexposed regions, creating sharp pattern edges and improving exposure margin
Solution Approach 2:
The resist composition acts as an intermediary material with unique dual-responsiveness properties. It contains compounds that can be selectively dissolved by either positive or negative developers depending on exposure, serving as a mediator that translates the exposure pattern into precise final patterns with high fidelity
3Manufacturing precision
If conventional resist compositions are used, then material selection is simple, but the solubility control in different developers is inadequate leading to poor pattern fidelity
Solution Approach 1:
The resist composition is designed as a composite material containing multiple functional components: resin, compound of formula (1), compound of formula (2), and other necessary additives. This composite structure enables the resist to exhibit both positive and negative development characteristics, allowing precise control of solubility in different developers and achieving high pattern fidelity
Solution Approach 2:
The resist composition exhibits different local qualities depending on exposure: unexposed regions maintain properties suitable for negative development while exposed regions develop properties suitable for positive development. This spatial differentiation of chemical properties within the same material enables precise pattern transfer with high fidelity
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-precision fine patterns with improved resolving power and reduced pattern distortion, allowing for the production of highly integrated electronic devices without the need for dividing exposure mask designs, thereby enhancing the fidelity of pattern transfer.
Implementation Method 1
a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation
Data Source
AI summary
A pattern forming method, including: (A) coating a substrate with a positive resist composition of which solubility in a positive developer increases and solubility in a negative developer decreases upon irradiation with actinic rays or radiation, so as to form a resist film; (B) exposing the resist film; and (D) developing the resist film with a negative developer; a positive resist composition for multiple development used in the method; a developer for use in the method; and a rinsing solution for negative development used in the method.