Dual Gap Thermo-Tunneling Apparatus for Thermoelectric Devices
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Solution Overview
Problem
Conventional thermoelectric devices have a limited figure of merit (ZT factor) that hinders their competitiveness with other power generation and cooling systems, despite recent improvements, further enhancements are needed to improve energy transfer efficiency.
Innovation Solution
The implementation of dual gap thermo-tunneling apparatus with paired p-type and n-type conductors, where the first gap is formed between p-type conductors and the second gap between n-type conductors, allowing thermally-driven electron tunneling across vacuum gaps, and the use of thermal isolation channels to maintain a large temperature differential, enabling efficient energy transfer and increased ZT factor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional single-gap thermoelectric devices are used, then the structure is simple, but the ZT factor and energy transfer efficiency are limited
Solution Approach 1:
The device is segmented into multiple functional gaps: a first gap between p-type conductors and a second gap between n-type conductors. This segmentation allows independent optimization of charge carrier transport in each gap, improving overall energy transfer efficiency while maintaining manageable structural complexity
Solution Approach 2:
The invention introduces a dual-gap configuration that adds spatial dimensionality to the thermoelectric device. By creating separate gaps for p-type and n-type conductors with different gap distances, the device optimizes electron and hole transport independently in different spatial dimensions, thereby improving the ZT factor
2Loss of energy
If the gap distance is increased to reduce thermal leakage, then thermal isolation improves, but electron tunneling efficiency decreases
Solution Approach 1:
Different gap distances are applied locally to different conductor types: the first gap distance for p-type conductors and a second (larger) gap distance for n-type conductors. This local quality differentiation allows optimization of electron tunneling for each carrier type while maintaining thermal isolation, as each gap is sized appropriately for its specific function
Solution Approach 2:
The invention changes the gap distance parameter differently for p-type and n-type conductors. By adjusting the first gap distance and second gap distance independently, the device optimizes the balance between thermal isolation and electron tunneling efficiency for each carrier type, improving overall device performance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the energy transfer efficiency and ZT factor of thermoelectric devices, allowing them to be more competitive with other power generation and cooling systems by increasing the net electrical current and reducing thermal leakage, thereby improving their overall performance.
Implementation Method 1
the first and second p-type conductive portions are spaced apart to form a first gap, and the first and second n-type conductive portions are spaced apart to form a second gap
Implementation Method 2
the first and second n-type conductive portions are spaced apart to form a second gap
Implementation Method 3
the use of thermal isolation channels to maintain a large temperature differential
Data Source
AI summary
Method and apparatus for improved thermal isolation for thermoelectric devices are disclosed. In one embodiment, a thermoelectric device includes a first substrate portion having a first p-type conductive portion electrically coupled to a first n-type conductive portion, and a second substrate portion having a second p-type conductive portion and a second n-type conductive portion, the second substrate portion being positioned proximate to the first substrate portion such that the first and second p-type conductive portions are approximately aligned and the first and second n-type conductive portions are approximately aligned, wherein the first and second p-type conductive portions are spaced apart to form a first gap, and the first and second n-type conductive portions are spaced apart to form a second gap.