Dual-Gate Electrode Segmentation for Leakage Control
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Solution Overview
Problem
The integration of semiconductor devices is hindered by the difficulty in achieving higher integration densities due to the need for novel and costly exposure technologies, particularly with reduced pattern widths leading to increased leakage currents and degraded subthreshold characteristics.
Innovation Solution
The semiconductor device incorporates a gate electrode with two sub-gates and impurity-implanted regions, where the sub-gates are electrically isolated and apply different voltages to reduce leakage currents and enhance subthreshold characteristics, thereby improving integration density and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If pattern widths are reduced to achieve higher integration, then integration density is improved, but leakage currents increase and subthreshold characteristics degrade
Solution Approach 1:
The gate electrode is divided into two separate sub-gate electrodes (first sub-gate and second sub-gate) that are electrically isolated from each other. This segmentation allows independent voltage control of each sub-gate, enabling better suppression of leakage currents at the source-drain junctions while maintaining the benefits of reduced pattern widths for higher integration density
Solution Approach 2:
Different voltages are applied to the first and second sub-gates to create localized electric field control at different positions along the channel. This local quality adjustment optimizes the electric field distribution to minimize leakage currents at critical regions while maintaining channel conductivity, thereby improving subthreshold characteristics without sacrificing integration density
2Quantity of substance
If pattern widths are reduced to achieve higher integration, then integration density is improved, but subthreshold characteristics are degraded
Solution Approach 1:
The gate electrode is segmented into two electrically isolated sub-gates, allowing independent voltage control to optimize subthreshold characteristics. By applying different voltages to each sub-gate, the electric field distribution along the channel can be tuned to improve subthreshold swing and reduce off-state leakage, thereby enhancing reliability while maintaining high integration density through reduced pattern widths
Solution Approach 2:
The dual-sub-gate structure enables dynamic voltage control where different voltage combinations can be applied to the first and second sub-gates depending on operational requirements. This dynamic control allows optimization of subthreshold characteristics for low-power operation while maintaining the ability to drive high currents when needed, thus improving reliability without compromising integration density
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration reduces leakage currents, increases on-current, and enhances subthreshold characteristics, allowing for higher integration densities while maintaining reliable data storage and reduced operational costs.
Implementation Method 1
first and second impurity-implanted regions of the substrate adjacent opposite sides of the gate electrode
Data Source
AI summary
A semiconductor device may include a semiconductor substrate with first and second spaced apart source/drain regions defining a channel region therebetween and a control gate structure on the channel region between the first and second spaced apart source/drain regions. More particularly, the control gate structure may include a first gate electrode on the channel region adjacent the first source/drain region, and a second gate electrode on the channel region adjacent the second source/drain region. Moreover, the first and second gate electrodes may be electrically isolated. Related devices, structures, methods of operation, and methods of fabrication are also discussed.