Dual-Gate TFT Array Structure for Threshold and Mobility Control
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Solution Overview
Problem
The complexity of panel manufacturing for electronic devices, such as display and lighting devices, makes it difficult to design transistors with structures that satisfy the diverse requirements of various functions, leading to degradation in device performance, particularly in controlling threshold voltage, mobility, and subthreshold parameters.
Innovation Solution
A thin film transistor (TFT) array substrate is designed with two different gate electrodes on the same layer over one active layer, allowing simultaneous control of threshold voltage, mobility, and subthreshold parameters, and includes a structure with a positive threshold voltage value and high S parameter, enabling high mobility and efficient driving transistor operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional single gate electrode structure is used, then the manufacturing process is simpler, but the control of threshold voltage, mobility, and subthreshold parameters is degraded
Solution Approach 1:
The gate electrode is segmented into two separate gate electrodes (first gate electrode and second gate electrode) disposed on the same layer. This segmentation allows independent control of threshold voltage and mobility parameters, resolving the technical contradiction by enabling precise parameter control while maintaining a manageable manufacturing process through standardized dual-gate fabrication techniques
2Reliability
If the panel manufacturing process is simplified for convenience, then the manufacturing process is easier to manage, but the device performance of transistors is degraded
Solution Approach 1:
Different regions of the gate structure are assigned different functions: the first gate electrode controls threshold voltage while the second gate electrode controls mobility and subthreshold parameters. This local quality differentiation enables optimized transistor performance for specific applications without requiring complete process redesign, thus improving device performance while maintaining manufacturing feasibility
3Adaptability or versatility
If a transistor structure is designed to satisfy multiple different functional requirements, then the adaptability is improved, but the design complexity increases
Solution Approach 1:
The dual gate electrode structure provides multi-functionality by enabling a single transistor design to satisfy multiple functional requirements: positive threshold voltage for driving transistors, high mobility for switching transistors, and high S parameter for analog applications. This universal structure eliminates the need for completely different transistor designs for different functions, reducing overall design complexity while improving adaptability
Data Source
AI summary
Provided are a thin film transistor array substrate and an electronic device including the same. More specifically, the thin film transistor array includes a first active layer including a first area, a second area spaced apart from the first area, and a channel area provided between the first area and the second area, a first gate electrode disposed on the first active layer, and a second gate electrode disposed on the same layer as the first gate electrode to overlap one end of the first gate electrode and to which a signal corresponding to a signal applied to the first gate electrode is applied. Therefore, it is possible to have a structure for simultaneously controlling the threshold voltage, mobility, and subthreshold (S) parameter of a thin film transistor.