Dual-Gate TFT Array Substrate Single-Mask Manufacturing

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Solution Overview

Problem

Traditional dual-gate TFT array substrate manufacturing processes are complex and inefficient due to the need for multiple masks, increasing process complexity and manufacturing costs.

Innovation Solution

A method for manufacturing a dual-gate TFT array substrate that forms the source and drain electrodes on the common electrode layer using a single mask, reducing the number of masks required and simplifying the process, while also forming the pixel electrode and top gate electrode with a single mask to improve efficiency.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Ease of manufacture

If traditional dual-gate TFT array substrate manufacturing process is used with separate masks for common electrode and source/drain electrodes, then manufacturing precision is maintained, but device complexity and manufacturing cost increase

Engineering Contradiction:
Improvemanufacturing process complexityVSAvoidelectrode formation precision
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

The patent combines the formation of common electrode, source electrode, and drain electrode into a single mask process. The mask layer is patterned to define all three electrode regions simultaneously, eliminating the need for separate masking steps. This merging of operations reduces device complexity and manufacturing cost while maintaining manufacturing precision through careful mask design and single-step patterning.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The single mask layer serves multiple functions by simultaneously defining the patterns for common electrode, source electrode, and drain electrode. This multi-functional mask approach consolidates what would traditionally require multiple specialized masks, simplifying the manufacturing process while maintaining the precision needed for each specific electrode formation.

Inventive Principle:
Principle #6Universality (Multi-functionality)

2Productivity

If multiple masks are used for forming common electrode and source/drain electrodes separately, then manufacturing precision is maintained, but productivity decreases

Engineering Contradiction:
Improvemanufacturing efficiencyVSAvoidelectrode alignment precision
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

The patent merges the patterning of common electrode, source electrode, and drain electrode into a single mask application and development step. This consolidation eliminates multiple sequential masking operations, directly improving manufacturing efficiency and productivity. The single-step process also eliminates alignment errors between multiple masks, maintaining manufacturing precision while accelerating production.

Inventive Principle:
Principle #5Merging (Combining)

3Reliability

If traditional FFS display mode manufacturing method is used with multiple masks, then electrode stability is ensured, but loss of time increases

Engineering Contradiction:
Improveelectrode stabilityVSAvoidmanufacturing cycle time
Core Design Contradiction:
ReliabilityVSLoss of time

Solution Approach 1:

The patent performs preliminary patterning of all electrode structures (common electrode, source electrode, drain electrode) in a single mask step before subsequent processing. This preliminary action consolidates multiple critical patterning operations into one step, ensuring electrode stability through proper single-step patterning while significantly reducing the total manufacturing cycle time by eliminating sequential mask operations.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach reduces the number of masks needed, shortens the manufacturing process, and enhances efficiency, while the top gate electrode acts as a light shading layer to maintain electrical stability of the thin film transistor.

Implementation Method 1

the top gate electrode acts as a light shading layer to maintain electrical stability of the thin film transistor

Methodology Applied
Scientific EffectLight absorption/shading: Absorption (EM radiation)

Data Source

PatentUS9966450B2Dual-gate TFT array substrate and manufacturing method thereof
Publication Date: 2018.05.08 TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO LTD
  • US9966450B2 patent drawing
  • US9966450B2 patent drawing
  • US9966450B2 patent drawing

AI summary

A dual-gate TFT (thin film transistor) array substrate and a manufacturing method thereof are provided. A source electrode and a drain electrode are formed on a common electrode layer; and a common electrode of the common electrode layer, the source electrode and the drain electrode can simultaneously be formed by one mask during manufacturing. Therefore, the dual-gate TFT array substrate and the manufacturing method thereof have beneficial effects to reduce the number of masks, shorten the process, and improve the manufacturing efficiency.