Dual-Gate Semiconductor Transistor With Temperature-Based Threshold Control
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Solution Overview
Problem
Existing semiconductor devices face challenges in achieving high on-state current, high operating speed, wide temperature range operation, long data retention, and low power consumption.
Innovation Solution
A semiconductor device incorporating a transistor with a first and second gate, a temperature sensor, and a voltage control circuit that adjusts the voltage applied to the second gate based on temperature to maintain consistent cutoff current, using metal oxide semiconductors to enhance performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a transistor with oxide semiconductor is used to achieve low off-state current, then data retention is improved, but operating speed deteriorates
Solution Approach 1:
The gate is divided into two separate gates: a first gate (front gate) and a second gate (back gate). This segmentation allows independent control of threshold voltage and channel conductivity, enabling simultaneous optimization of data retention and operating speed that cannot be achieved with a single gate structure.
Solution Approach 2:
The invention changes the electrical parameters by applying different voltages to the first and second gates. The first gate voltage controls the threshold voltage for data retention, while the second gate voltage independently controls the on-state current for operating speed, allowing dynamic parameter optimization.
2Reliability
If threshold voltage is increased to reduce off-state current, then data retention is improved, but on-state current deteriorates
Solution Approach 1:
By segmenting the gate into first and second gates, the invention separates the functions of threshold voltage control and on-state current control. The first gate voltage sets the threshold voltage to reduce off-state current, while the second gate voltage independently enhances the on-state current, resolving the trade-off between data retention and drive current.
Solution Approach 2:
The invention changes multiple electrical parameters simultaneously by applying optimized voltage values to both gates. The first gate voltage is set to achieve desired threshold voltage for low leakage, while the second gate voltage is set to maximize channel conductivity, allowing independent optimization of both parameters.
3Reliability
If temperature compensation is implemented to maintain consistent cutoff current, then operating reliability is improved, but device complexity increases
Solution Approach 1:
The gate segmentation into first and second gates provides inherent temperature compensation capability. The second gate (back gate) can be used to compensate for temperature-induced threshold voltage shifts by applying appropriate bias voltages, achieving temperature stability without requiring external compensation circuits.
Solution Approach 2:
The transistor structure itself provides temperature compensation through the dual-gate configuration. The back gate voltage can be adjusted to counteract temperature effects on the front gate, allowing the device to self-regulate its electrical characteristics across temperature ranges without external intervention.
Data Source
AI summary
A semiconductor device with a high on-state current and high operating speed is provided. The semiconductor device includes a transistor and a first circuit. The transistor includes a first gate and a second gate, and the first gate and the second gate include a region where they overlap each other with a semiconductor layer therebetween. The first circuit includes a temperature sensor and a voltage control circuit. The temperature sensor has a function of obtaining temperature information and outputting the temperature information to the voltage control circuit. The voltage control circuit has a function of converting the temperature information into a control voltage. The first circuit applies the control voltage to the second gate.