Dual-Gate Transistor Structure for Fast Switching at Low Power
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Solution Overview
Problem
Source-gated transistors (SGTs) have limited switching speed due to reduced drain current and transconductance, making them unsuitable for high-speed applications like radio frequency (RF) due to their design limitations.
Innovation Solution
A multiple-gate transistor design is introduced, featuring a current control gate and a switching gate separated by a semiconductor region and insulating layer, allowing independent control of current flow through the application of electric fields, enhancing switching speed and performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by stationary object
If source-gated transistor design is used, then operating voltage and power consumption are reduced, but switching speed deteriorates
Solution Approach 1:
The transistor gate is segmented into two independent gates: a first gate for controlling current magnitude and a second gate for switching. This segmentation allows each gate to be optimized for its specific function, enabling the switching gate to operate at high speeds while the current control gate maintains low power consumption characteristics.
Solution Approach 2:
The patent introduces a temporal dimension to the control mechanism by separating the control functions into distinct time phases: the switching gate handles rapid on/off transitions, while the current control gate adjusts the current magnitude during the on-state. This dimensional separation resolves the speed-power contradiction.
2Temperature
If source-gated transistor design is used, then operating voltage is reduced, but switching speed deteriorates
Solution Approach 1:
The gate structure is divided into two independent gates that can operate at different voltage levels and provide different functions. The switching gate can be optimized for fast switching at appropriate voltage levels, while the current control gate maintains the low operating voltage advantage of SGTs during the conduction phase.
Solution Approach 2:
The patent implements dynamic voltage control where the switching gate applies high voltage pulses for rapid switching, while the current control gate maintains lower voltages during operation. This dynamic voltage management allows the device to achieve both low operating voltage and high switching speed.
3Speed
If conventional field-effect transistor design is used, then switching speed is improved, but power consumption increases
Solution Approach 1:
By segmenting the gate into switching and current control functions, the patent captures the high-speed advantage of conventional FETs in the switching gate while recovering the low power consumption characteristic through the current control gate's ability to maintain appropriate current levels during operation.
Solution Approach 2:
The current control gate acts as an intermediary that modulates the current between source and drain, enabling the switching gate to operate at high speeds without excessive power consumption. This intermediary control mechanism allows precise current management during the high-speed switching operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The multiple-gate transistor achieves faster switching speeds compared to conventional SGTs and field-effect transistors (FETs), enabling improved performance in high-speed applications while maintaining low power consumption and operating voltage advantages.
Implementation Method 1
a current control gate for controlling a magnitude of current flowing between the source and the drain through the semiconductor region in dependence on a first electric field applied to the current control gate
Implementation Method 2
a switching gate for permitting current to flow between the source and the drain through the semiconductor region in dependence on a second electric field applied to the switching gate
Data Source
AI summary
A multiple-gate transistor comprises a source, a drain spaced apart from the source, a semiconductor region disposed between the source and drain, and an insulating region disposed over the semiconductor region. A current control gate controls a magnitude of current flowing between the source and drain through the semiconductor region in dependence on a first electric field applied to the current control gate, and is separated from the source by the semiconductor region and the insulating region. A switching gate permits current to flow between the source and drain through the semiconductor region in dependence on a second electric field applied to the switching gate. The transistor's conduction state can be controlled by varying the second electric field applied to the switching gate, whilst varying the first electric field that is applied to the current control gate can set the magnitude of the current through the multiple-gate transistor.