Dual-Layer Oxide TFT With Rare-Earth Doping for Stable Mobility
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Solution Overview
Problem
Metal oxide thin film transistors face instability due to factors like light irradiation, manufacturing processes, and external water/oxygen, despite having high mobility, which affects their stability and performance.
Innovation Solution
Incorporating a first metal oxide semiconductor layer doped with a rare earth element, forming strong ionic bonds to enhance stability, and optionally using a second metal oxide semiconductor layer for protection and improved mobility, along with a substrate made of rigid or flexible materials to support the structure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Speed
If a metal oxide semiconductor layer with high mobility is used, then the carrier mobility is improved, but the stability of the transistor is worsened due to susceptibility to light irradiation, manufacturing process, and external water and oxygen
Solution Approach 1:
The patent uses a composite semiconductor layer structure combining metal oxide semiconductor material with organic semiconductor material. The metal oxide layer provides high carrier mobility while the organic semiconductor layer provides stability against environmental factors. This composite structure resolves the contradiction by allowing each material to contribute its strengths: the metal oxide portion maintains high speed performance while the organic portion protects against degradation from light, water, and oxygen exposure.
2Speed
If the metal oxide semiconductor layer is doped with rare earth element, then the carrier mobility is further improved, but the manufacturing complexity increases
Solution Approach 1:
The patent introduces rare earth element doping as a parameter change in the metal oxide semiconductor material composition. By carefully controlling the doping concentration and selecting specific rare earth elements, the carrier mobility is enhanced while maintaining compatibility with existing manufacturing processes. The principle of parameter changes allows optimization of material properties without fundamentally altering the manufacturing approach.
3Reliability
If a dual-layer semiconductor structure is implemented, then the stability is improved through protection, but the device complexity increases
Solution Approach 1:
The patent segments the semiconductor layer into two distinct functional layers: a metal oxide semiconductor layer for high mobility and an organic semiconductor layer for stability and protection. This segmentation allows each layer to perform its specific function optimally while working together as an integrated structure. The segmentation principle resolves the complexity issue by creating a modular design where each layer's role is clearly defined and can be optimized independently.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution enhances the stability and mobility of metal oxide thin film transistors, protecting them from environmental factors and ensuring consistent performance.
Implementation Method 1
Incorporating a first metal oxide semiconductor layer doped with a rare earth element, forming strong ionic bonds to enhance stability
Data Source
AI summary
The present disclosure provides a metal oxide thin film transistor, an array substrate and a display device. A metal oxide thin film transistor in the present disclosure includes: a substrate, a first metal oxide semiconductor layer on the substrate, and a second metal oxide semiconductor layer on a side of the first metal oxide semiconductor layer away from the substrate; a carrier mobility of the first metal oxide semiconductor layer is higher than that of the second metal oxide semiconductor layer; a material of the first metal oxide semiconductor layer includes: a first metal oxide doped with a rear earth element; a difference between an electronegativity of the rare earth element and an electronegativity of oxygen element is greater than or equal to a difference between an electronegativity of a metal element in the first metal oxide and the electronegativity of oxygen element.