Dual Memory System Low Voltage Access

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Memory devices face challenges in operating effectively in low-voltage modes, where reduced voltage renders them inaccessible, leading to increased power consumption in portable devices.

Innovation Solution

Incorporating a dual-memory system within an integrated circuit, where a high-density memory operates at a higher voltage and a low-voltage memory remains accessible even in low-voltage modes, allowing data retention and access without exiting the low-power state.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Use of energy by moving object

If voltage is reduced to enable low-power mode, then power consumption is reduced, but memory accessibility is lost

Engineering Contradiction:
Improvepower consumptionVSAvoidmemory accessibility
Core Design Contradiction:
Use of energy by moving objectVSEase of operation

Solution Approach 1:

The memory system is segmented into two distinct memory devices: a first memory device that operates at higher voltage and a second memory device that operates at lower voltage. This segmentation allows each memory to operate independently at its optimal voltage level, enabling the second memory to remain accessible during low-voltage modes while the first memory operates at higher voltage when needed.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different voltage requirements are assigned to different memory devices based on their specific operational characteristics. The first memory device is configured for higher voltage operation to provide high-density storage, while the second memory device is configured for low-voltage operation to maintain accessibility during power-saving modes. This local differentiation of voltage requirements resolves the contradiction between power consumption and memory accessibility.

Inventive Principle:
Principle #3Local quality

2Device complexity

If single memory device is used, then device complexity is reduced, but power consumption increases during active mode

Engineering Contradiction:
Improvememory device structureVSAvoidpower consumption
Core Design Contradiction:
Device complexityVSUse of energy by moving object

Solution Approach 1:

The memory system is divided into two separate memory devices with different operational characteristics. This segmentation enables the system to leverage the low-voltage characteristics of the second memory device during power-saving modes, reducing overall power consumption compared to using a single high-voltage memory device that would need to remain accessible at all times.

Inventive Principle:
Principle #1Segmentation

3Quantity of substance

If high-density memory is used, then data storage capacity is improved, but voltage requirement increases

Engineering Contradiction:
Improvedata storage capacityVSAvoidvoltage requirement
Core Design Contradiction:
Quantity of substanceVSStress or pressure

Solution Approach 1:

The memory capacity requirement is segmented across two different memory devices operating at different voltage levels. The first memory device provides high-density storage capacity when operating at higher voltage, while the second memory device provides accessibility during low-voltage operation. This segmentation allows the system to achieve both high storage capacity and low-voltage operation without requiring a single memory device to perform both functions.

Inventive Principle:
Principle #1Segmentation

Data Source

PatentUS7675806B2Low voltage memory device and method thereof
Publication Date: 2010.03.09 VLSI TECHNOLOGY LLC
  • US7675806B2 patent drawing
  • US7675806B2 patent drawing
  • US7675806B2 patent drawing

AI summary

A device is disclosed having a low-voltage memory device. The device includes a first memory having a first memory topology and a second memory having a second memory topology, with both memories located in an integrated circuit. The first memory is a relatively high-density memory device, capable of storing large amounts of data relative to the second memory. The second memory is a low-voltage memory device capable of being accessed at low-voltages relative to the voltage at which the first memory can be accessed. Accordingly, the second memory is accessible when the integrated circuit is placed in a low-voltage mode of operation, which may represent a data retention state (sleep state) for the first memory or other portions of the integrated circuit. Thus, the device is able to store large amounts of data in the high density memory in a normal or active mode of operation, and also have access to the low-voltage memory during the low-voltage mode of operation.