Dual-Nozzle Substrate Processing for Uniform Film Thickness
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Solution Overview
Problem
Existing substrate processing methods face challenges in evenly supplying process gases onto substrates, leading to uneven film formation.
Innovation Solution
A substrate processing apparatus with a configuration that includes first and second nozzles to mix process and inert gases, utilizing specific ejection hole arrangements to ensure even gas distribution across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a single nozzle supplies process gas to the substrate, then the device structure is simple, but the gas distribution becomes uneven leading to poor film uniformity
Solution Approach 1:
The single nozzle is divided into multiple nozzles (first nozzle and second nozzle) with different functions. The first nozzle supplies process gas while the second nozzle supplies inert gas, allowing independent control of gas distribution patterns to achieve uniform film formation across the substrate surface.
Solution Approach 2:
Different regions of the substrate receive different gas compositions tailored to local requirements. The first ejection holes positioned at substrate edges supply process gas for film formation, while the second ejection holes supply inert gas to prevent gas accumulation and maintain proper gas flow dynamics in specific regions.
2Manufacturing precision
If process gas is supplied without inert gas mixing, then the process is simple, but gas accumulates at substrate edges causing uneven film thickness
Solution Approach 1:
Inert gas acts as an intermediary substance that facilitates proper process gas distribution. The inert gas supplied through the second nozzle mixes with process gas and directs it toward the substrate, preventing edge accumulation and ensuring uniform gas coverage across the entire substrate surface.
Solution Approach 2:
The gas composition parameter is changed by introducing inert gas mixed with process gas. This modification in gas composition (adding inert gas component) alters the flow characteristics and distribution pattern, preventing accumulation at substrate edges and achieving uniform film thickness.
3Ease of operation
If ejection holes are arranged only for process gas supply, then the system is simple, but gas flow direction cannot be controlled effectively
Solution Approach 1:
The ejection holes are segmented into two distinct groups: first ejection holes for process gas supply and second ejection holes for inert gas supply. Each group is positioned and oriented differently to control specific aspects of gas flow, enabling precise directional control toward the substrate while maintaining manageable system complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus achieves uniform film thickness and improved in-plane uniformity by directing gas flows effectively towards the substrate edges and center, reducing uneven film formation.
Implementation Method 1
a gas flow flowing from the nozzles toward the exhaust hole
Implementation Method 2
the first nozzle and the second nozzle are configured to mix the inert gas, which is supplied from at least one of the first and second ejection holes, and the process gas at peripheral edges of the substrates
Data Source
AI summary
There is provided a technique that includes a process chamber including an exhaust hole facing a side of a plurality of accommodated substrates; a first nozzle installed at a position facing the exhaust hole and configured to supply a process gas into the process chamber; and a second nozzle configured to supply an inert gas into the process chamber, and formed with a plurality of first ejection holes corresponding to each of the substrates and opened toward an upstream of a gas flow flowing from the first nozzle to the exhaust hole and one or more second ejection holes corresponding to some of the substrates and opened toward a downstream of the gas flow, wherein the first and second nozzles are configured to mix the inert gas, supplied from at least one of the first and second ejection holes, and the process gas at peripheral edges of the substrates.