Dual-Pixel Image Sensor Layout for Quantum Efficiency and Dynamic Range

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Solution Overview

Problem

BSI image sensor devices face challenges in detecting low irradiance targets under strong background irradiance due to insufficient quantum efficiency and dynamic range, leading to saturation issues.

Innovation Solution

The image sensor is configured with two groups of pixels: one group has high quantum efficiency to improve signal-to-noise ratio, and the other group has a blocking metal layer to reduce incident light intensity, thereby extending exposure time and enhancing saturation levels.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If the image sensor uses a standard pixel configuration, then the device complexity is low, but the quantum efficiency and dynamic range are insufficient for detecting low irradiance targets under strong background irradiance

Engineering Contradiction:
Improvedetection capabilityVSAvoidpixel configuration
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The pixel array is segmented into two distinct groups: first pixels with high quantum efficiency for detecting low irradiance targets, and second pixels with extended dynamic range for handling strong background irradiance. This segmentation allows each group to be optimized for specific detection conditions, resolving the contradiction between detection capability and device complexity.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different pixel structures are assigned to different regions of the pixel array based on local detection requirements. First pixels use a structure optimized for high quantum efficiency (with microlens and charge storage region) while second pixels use a structure optimized for extended dynamic range (with additional light-blocking structure). This local differentiation enables each region to perform its specific function effectively.

Inventive Principle:
Principle #3Local quality

2Measurement precision

If the image sensor increases quantum efficiency to improve signal-to-noise ratio, then low irradiance detection is enhanced, but saturation occurs under strong background irradiance

Engineering Contradiction:
Improvesignal-to-noise ratioVSAvoidsaturation under strong background
Core Design Contradiction:
Measurement precisionVSObject-affected harmful factors

Solution Approach 1:

The pixel array is divided into two groups with different structural characteristics. First pixels are designed with high quantum efficiency to maximize signal-to-noise ratio for low irradiance detection, while second pixels incorporate additional light-blocking structures to prevent saturation under strong background irradiance. This segmentation allows each group to handle different irradiance conditions optimally.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

Different structural qualities are applied to different pixel groups based on their functional requirements. First pixels have a structure that maximizes light capture and charge collection for high signal-to-noise ratio, while second pixels have a modified structure with light-blocking elements that reduce saturation effects under strong illumination. This local quality differentiation resolves the contradiction between sensitivity and saturation resistance.

Inventive Principle:
Principle #3Local quality

3Adaptability or versatility

If the image sensor extends dynamic range to handle strong background irradiance, then saturation is reduced, but quantum efficiency for low irradiance detection decreases

Engineering Contradiction:
Improvedynamic rangeVSAvoidquantum efficiency
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The pixel array is segmented into two groups: first pixels optimized for high quantum efficiency to maintain reliable detection of low irradiance targets, and second pixels optimized for extended dynamic range to handle strong background irradiance without saturation. This segmentation allows the system to achieve both high quantum efficiency and extended dynamic range simultaneously by assigning different optimization goals to different regions.

Inventive Principle:
Principle #1Segmentation

Solution Approach 2:

The image sensor achieves multi-functionality by incorporating two types of pixels that can operate simultaneously or selectively depending on imaging conditions. The first pixels provide high quantum efficiency for low-light conditions, while second pixels provide extended dynamic range for high-light conditions. This universal design allows the sensor to adapt to various irradiance conditions without compromising either quantum efficiency or dynamic range.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This configuration improves the image sensor's quantum efficiency and dynamic range, enabling effective detection of low irradiance targets even under high background irradiance conditions.

Implementation Method 1

These image sensors utilize an array of pixels that absorb (e.g., sense) the incoming radiation and convert it into electrical signals

Methodology Applied
Scientific EffectPhotoelectric Effect: Photoelectric Effect

Implementation Method 2

depositing a metal layer with a groove structure over the radiation sensing region

Methodology Applied
Scientific EffectLight absorption: Absorption (EM radiation)

Data Source

PatentUS12243898B2Image sensor with high quantum efficiency
Publication Date: 2025.03.04 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US12243898B2 patent drawing
  • US12243898B2 patent drawing
  • US12243898B2 patent drawing

AI summary

The present disclosure describes an image sensor device and a method for forming the same. The image sensor device can include a semiconductor layer. The semiconductor layer can include a first surface and a second surface. The image sensor device can further include an interconnect structure formed over the first surface of the semiconductor layer, first and second radiation sensing regions formed in the second surface of the semiconductor layer, a metal stack formed over the second radiation sensing region, and a passivation layer formed through the metal stack and over a top surface of the first radiation sensing region. The metal stack can be between the passivation layer and an other top surface of the second radiation sensing region.