Dual Semiconductor TFT Surface Roughness Control
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Solution Overview
Problem
Current display apparatuses face challenges in achieving high integration and low power consumption while precisely controlling light emission and intensity, particularly due to the limitations of thin-film transistors in driving circuits.
Innovation Solution
The use of a display apparatus with a substrate featuring a first thin-film transistor with an oxide semiconductor layer and a second thin-film transistor with a silicon semiconductor layer, where the oxide semiconductor layer's surface roughness is increased through plasma treatment to enhance power efficiency and integration, with specific compositions and structures to optimize performance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If the number of thin-film transistors electrically connected to one display element is increased to precisely control light emission and intensity, then light emission control precision is improved, but device complexity and power consumption increase
Solution Approach 1:
The patent divides the thin-film transistor structure into multiple functional layers including oxide semiconductor layer, silicon semiconductor layer, gate electrode, source electrode, and drain electrode. This segmentation allows precise control of light emission through controlled electrical signals while managing complexity through modular layer design
Solution Approach 2:
The patent employs composite semiconductor structure combining oxide semiconductor material and silicon semiconductor material in the same thin-film transistor. This composite approach enables precise light emission control through differentiated carrier mobility characteristics of the two materials while integrating multiple functions within a single transistor structure
2Measurement precision
If the number of thin-film transistors electrically connected to one display element is increased to precisely control light emission and intensity, then light emission control precision is improved, but power consumption increases
Solution Approach 1:
The patent applies different semiconductor materials with different properties to different regions of the thin-film transistor. The oxide semiconductor layer provides low leakage current characteristics for power saving, while the silicon semiconductor layer provides high carrier mobility for precise control, achieving both low power consumption and precise light emission control
Solution Approach 2:
The patent utilizes the different carrier mobility parameters of oxide semiconductor and silicon semiconductor materials to optimize transistor performance. By controlling the thickness and composition parameters of each layer, the patent achieves precise light emission control while minimizing power consumption through optimized electrical characteristics
3Reliability
If plasma treatment is applied to increase surface roughness of the oxide semiconductor layer, then electrical contact and carrier mobility are improved, but manufacturing process complexity increases
Solution Approach 1:
The patent applies plasma treatment to the oxide semiconductor layer before depositing the silicon semiconductor layer. This preliminary action modifies the surface properties of the oxide layer to improve electrical contact and carrier mobility, ensuring optimal performance before subsequent manufacturing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration enables improved power management and high-resolution display capabilities with reduced power consumption, allowing for efficient light emission control and increased integration of display elements.
Implementation Method 1
a surface roughness of the first semiconductor layer may be increased by plasma treatment
Data Source
AI summary
A display apparatus is provided which may include a substrate including a display area and a non-display area adjacent to the display area, a first thin-film transistor disposed on the substrate and including a first semiconductor layer including an oxide semiconductor material, and a second thin-film transistor disposed on the substrate and including a second semiconductor layer including a silicon semiconductor material, wherein a surface roughness of the first semiconductor layer is increased by plasma treatment. A method of manufacturing the display apparatus is also provided.