Dual-Transistor Display Structure With Polysilicon and Oxide Layers
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Solution Overview
Problem
The complexity of manufacturing processes for display devices is increased due to the use of different types of transistors in the display region and the driving circuit of the gate electrode, requiring repetitive chemical vapor deposition and complicating the overall configuration without improving transistor properties.
Innovation Solution
A display device design that incorporates both polysilicon and metal oxide transistors, with specific layer structures and interlayer relationships to simplify the manufacturing process and maintain desired transistor properties, including a substrate with gate electrodes, insulating layers, source and drain electrodes, and a display medium layer.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If different types of transistors are used in the display region and driving circuit, then the desired transistor properties are achieved, but the manufacturing process complexity increases
Solution Approach 1:
The patent divides the transistor structure into distinct segments: a first transistor type for the display region and a second transistor type for the driving circuit region. This segmentation allows each transistor type to be optimized independently for its specific application while maintaining separate manufacturing processes, thus achieving desired properties without requiring the entire device to undergo complex repetitive deposition cycles.
Solution Approach 2:
The patent applies local quality by using different semiconductor materials (polysilicon for first transistor, metal oxide for second transistor) and different gate electrode structures in different regions of the display device. This allows each region to have the specific properties needed for its function while avoiding the need for repetitive chemical vapor deposition across the entire device.
2Reliability
If different types of transistors are used in the display region and driving circuit, then the desired transistor properties are achieved, but the manufacturing process time increases
Solution Approach 1:
The patent performs preliminary actions by forming the first and second transistors with their respective semiconductor materials and gate structures in separate, optimized processes before final integration. The first transistor is formed with polysilicon and appropriate gate structure, then the second transistor is formed with metal oxide and its gate structure, allowing each to be manufactured efficiently without requiring multiple repetitive deposition cycles on the same structure.
3Reliability
If different types of transistors are used in the display region and driving circuit, then the desired transistor properties are achieved, but the device configuration becomes more complex
Solution Approach 1:
The patent segments the device into distinct functional regions with different transistor types: the display region contains first transistors with polysilicon active layers, while the driving circuit region contains second transistors with metal oxide active layers. This clear segmentation simplifies the overall configuration by allowing each region to be designed and manufactured independently with optimized structures for its specific function.
Solution Approach 2:
The patent implements local quality by assigning different transistor configurations to different regions based on their functional requirements. The first transistor type in the display region uses polysilicon with specific gate structures optimized for display switching, while the second transistor type in the driving circuit uses metal oxide with gate structures optimized for driving circuit operations, thereby achieving desired properties without uniform complexity throughout the entire device.
Data Source
AI summary
1. An electronic device is disclosed, which includes: a substrate, a first active layer, a first gate electrode, a first insulating layer, a second active layer, a second insulating layer and a third insulating layer. The first active layer is disposed on the substrate and comprises a polysilicon material. The first gate electrode is disposed on the substrate and overlaps with the first active layer in a normal direction of the substrate. The first insulating layer is disposed between the first gate electrode and the first active layer. The second active layer is disposed on the substrate and comprises a metal oxide material. The second insulating layer is disposed between the first active layer and the second active layer. The third insulating layer is disposed between the second insulating layer and the second active layer.