Solid-State Devices TRIZ Cases

A lower-doped edge layer extends below the APD junction to ease edge electric fields, cutting leakage current while improving breakdown voltage.

Nonuniform metal bond placement across pixel blocks lowers interconnection resistance and shading in stacked image sensors.

A dummy insulating pattern anchors light emitting elements between pixel electrodes to prevent misalignment defects in display panels.

Vertical light-blocking layers isolate adjacent micro LED sub-pixels, improving color reproducibility and contrast at high pixel density.

A substrate-free LED package uses encapsulation and optical layers to cut thickness, improve RGB output balance, and reduce crosstalk.

A hydrogen-storing gate electrode absorbs emitted hydrogen, limiting oxide semiconductor oxygen deficiencies and stabilizing transistor characteristics.

Vertical stacking with etched grooves and recessed semiconductor patterns raises memory integration while reducing fine-patterning cost and process burden.

Selective epitaxy in SOI MOSFET regions avoids bulk-silicon etch residue issues, improving growth uniformity and electrical consistency.

Convex-concave panel edges with through-holes narrow tiled display seams while preserving electrical routing space and attachment security.

Per-pixel gain adjustment helps event sensors adapt to lighting changes while preserving precise detection of pixel signal changes.

An overlapping oxygen supply pattern restores oxide TFT electrical characteristics in shrinking display transistor areas while avoiding extra process steps.

A metal shielding layer and guide grooves confine electric fields, reducing micro LED mis-assembly while improving transfer precision and yield.

Sealed passivation and adhesive layers block moisture paths and insulate conductive parts to reduce short defects in LED displays.

A conductive layer over OLED power lines absorbs laser-sealing heat to prevent hillocks, warping, and short-circuit faults.

A scattering pattern redirects side-emitted LED light toward the front surface to smooth luminance distribution and raise on-axis brightness.

A stepped Cu-to-Cu bonding pad structure suppresses hillocks and leakage current while simplifying image sensor chip bonding.

Combining polysilicon and metal oxide transistors in one display structure simplifies deposition steps while preserving transistor properties.

Concurrent polysilicon fill and polishing align gate trenches and peripheral elements to cut on-resistance while maintaining breakdown voltage.

U-shaped RDL daisy chains connect stacked semiconductor dies serially to cut circuit load, improve signal integrity, and lower power use.

A stepped dual planarization layer preserves LED electrode contact and reduces residual film when transfer misalignment occurs.

A dummy pattern between OLED pixels guides etchant residue out of non-emission regions, preventing fence defects and preserving electrode connectivity.

A stacked electrode and insulating layer layout connects subminiature LEDs more stably, preventing shorts and improving light emission in displays.

Selecting thermosetting polymers with tuned glass transition and modulus cuts thermal-cycling stress in flexible electronics substrates.

Using an amorphous oxide semiconductor electrode on the light-entry side cuts near-infrared absorption and improves sensor sensitivity with ITO-compatible production.

Separating touch lines into non-transmissive areas preserves light transmittance while sensing transistors pinpoint defective touch sensors.

An organic insulating layer fills seams around inorganic LEDs, preventing damage and poor electrode contact during display manufacturing.

A high-conductivity insulating Box layer and heat-resistant transfer bonding improve SOI heat dissipation while limiting high-frequency loss.

Laterally extended micro LED electrodes create isolated bonding regions that prevent shorts, protect the epitaxial structure, and improve yield.

A single power supply drives multi-color iLEDs in one pixel, cutting wiring complexity while improving white-light efficiency and display resolution.

Curved-bottom pixel recesses and doped sidewall layers confine lattice-mismatch dislocations, improving image sensor reliability.

Dummy oxide-semiconductor elements at low-density edge regions stabilize oxygen distribution, reduce deterioration, and improve device reliability.

By moving the shared common electrode to the gate line layer outside the display area, this case improves pixel aperture ratio and transmittance.

A recessed via groove and aligned through-holes expand encapsulation contact area, improving display adhesion and mechanical stability.

Matching keel electrode voltage to the common electrode suppresses liquid crystal disorder and edge brightening, improving TFT-LCD contrast.

Vertically stacked RGB LED parts use extended contacts and an adhesive layer to improve current uniformity, color accuracy, and light extraction.

A high-conductivity thermal layer removes heat while limiting electron backscatter, enabling thinner or removed substrates for sharper imaging.

A gate electrode protruding into shallow trench isolation redistributes electric fields to cut hot carrier damage and raise FET breakdown voltage.

Adjusting optical particle type and concentration in a repair sealant helps repaired micro LED areas match surrounding display color.

Varying resonance layer thickness across pixel and peripheral regions improves light resonance and signal processing despite substrate height differences.

A low-absorption member above a biased wall electrode blocks stray light while reducing dark current, white spots, and pixel condensing loss.

A shifted-mask capping layout thickens pixel regions while limiting coverage in transmission regions to improve transmittance and luminescent efficiency.

Vertical multi-gate pixel transistors in a three-substrate imaging element shorten interconnects while preserving transistor area and conversion efficiency.

Shared top interconnects and fewer bottom connections let stacked micro-LED layers stay independently controlled while freeing pixel area.

A thick pad insulating layer shields signal line ends from etching solutions, reducing short circuits and pad deterioration during display fabrication.

Reflective walls and an overlapping microstructure layer disperse large-angle light to cut Mini LED color shift and raise brightness efficiency.

A neuromorphic layer and buffer between stacked memory dies and the host interface boost local processing, throughput, and capacity with lower power.

Alternating assembly wiring and a planarization contact structure prevent corrosion-driven shorts while improving micro-LED transfer and light extraction.

Localized blue and green quantum dot regions around blue and short-wavelength LEDs reduce yellow shift and improve white light uniformity.

Ion implantation creates defect-rich regions around SOI RF devices to trap charge carriers, cut parasitic capacitance, and improve linearity.