Oxide TFT Display Layout With Oxygen Supply for Narrow Transistor Areas
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Solution Overview
Problem
As display device resolution increases, the area available for transistors decreases, leading to reduced electrical characteristics due to the narrow space, which affects their performance.
Innovation Solution
The display device incorporates an oxygen supply pattern overlapping the first active pattern to provide oxygen, improving the electrical characteristics of the transistors, and includes a method of manufacturing where the oxygen supply and second active patterns are formed simultaneously, reducing manufacturing costs and time.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Area of moving object
If the resolution of the display device is increased and the dead space is decreased, then the area available for transistors is reduced, but the electrical characteristics of the transistors deteriorate due to the narrow space
Solution Approach 1:
An oxygen supply pattern is formed in advance on the first active pattern before the transistor is fully assembled. This preliminary oxygen supply compensates for oxygen deficiency that would otherwise occur due to the narrow space constraints, thereby maintaining good electrical characteristics even when the transistor area is reduced for higher resolution displays
Solution Approach 2:
The oxygen supply pattern acts as an intermediary element between the environment and the first active pattern. It mediates the oxygen supply process by directly providing oxygen to the first active pattern, ensuring proper oxygenation despite the limited space available in high-resolution display configurations
2Reliability
If an oxygen supply pattern is added to improve transistor electrical characteristics, then the manufacturing process complexity increases, but the manufacturing time and cost increase due to additional processing steps
Solution Approach 1:
The oxygen supply pattern and the second active pattern are formed simultaneously in the same processing step. This merging of formation processes eliminates the need for separate oxygen supply pattern fabrication steps, thereby reducing manufacturing complexity and time while still achieving the goal of improving transistor electrical characteristics
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The oxygen supply pattern enhances the electrical characteristics of the transistors, improving their performance while reducing manufacturing costs and time by eliminating the need for additional processing steps.
Implementation Method 1
an oxygen supply pattern disposed on an insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern
Data Source
AI summary
A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern.