Solid-State Image Sensor Pixel Separation for Low Light Absorption
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Solution Overview
Problem
Solid-state imaging elements face deterioration in condensing characteristics due to light absorption in conductive light blocking walls, leading to increased dark current and white spots in photoelectric conversion sections.
Innovation Solution
Incorporating a wall-like electrode with a negative bias voltage and a low absorption member in the separation region between photoelectric conversion sections, where the low absorption member is positioned further on the light incident side than the wall-like electrode, reducing light absorption and suppressing dark current and white spots.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a conductive light blocking wall is used in the separation region, then light blocking performance is improved, but light absorption increases causing deterioration in condensing characteristic
Solution Approach 1:
The separation region is divided into two functional parts: a light blocking wall for blocking oblique light and a low absorption member for minimizing light absorption. This segmentation allows each component to perform its specific function optimally without the drawbacks of a single-material solution.
Solution Approach 2:
Different materials are used in different locations within the separation region. The light blocking wall (made of high-refractive-index material) is positioned where light blocking is needed, while the low absorption member (made of low-absorption material) is positioned where light transmission is critical, achieving local optimization of optical properties.
2Object-affected harmful factors
If a light blocking wall is positioned closer to the light incident side, then light blocking effectiveness is improved, but condensing characteristic deteriorates due to increased light absorption
Solution Approach 1:
The separation region is divided into two functional parts: a light blocking wall for blocking oblique light and a low absorption member for minimizing light absorption. This segmentation allows each component to perform its specific function optimally without the drawbacks of a single-material solution.
Solution Approach 2:
Different materials are used in different locations within the separation region. The light blocking wall (made of high-refractive-index material) is positioned where light blocking is needed, while the low absorption member (made of low-absorption material) is positioned where light transmission is critical, achieving local optimization of optical properties.
3Quantity of substance
If the photoelectric conversion section is made larger to improve light receiving amount, then saturation charge amount increases, but dark current and white spots increase due to larger area
Solution Approach 1:
The invention converts the potentially harmful effect of the separation region into a beneficial one by using a low absorption member that not only blocks light between pixels but also acts as a light guide, directing oblique light into the photoelectric conversion section and increasing the light receiving amount without increasing dark current.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses deterioration in the condensing characteristic of photoelectric conversion sections by minimizing light absorption and reducing dark current and white spots, thereby enhancing image quality.
Implementation Method 1
a wall-like electrode and a low absorption member. The wall-like electrode is disposed in a wall shape, and a negative bias voltage is applied thereto
Implementation Method 2
The low absorption member is disposed further on the light incident side than the wall-like electrode and has a light absorption rate smaller than that of the wall-like electrode
Data Source
AI summary
A solid-state imaging element according to the present disclosure includes a semiconductor layer and a separation region. The semiconductor layer includes a plurality of photoelectric conversion sections disposed in a matrix. The separation region separates the photoelectric conversion sections adjacent to each other in the semiconductor layer. The separation region includes a wall-like electrode and a low absorption member. The wall-like electrode is disposed in a wall shape, and a negative bias voltage is applied thereto. The low absorption member is disposed further on the light incident side than the wall-like electrode and has a light absorption rate smaller than that of the wall-like electrode.


