Infrared Imaging Electrode Layout Using Amorphous Oxide Semiconductor
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Infrared sensors using ITO electrodes face reduced sensitivity due to absorption of near-infrared wavelengths, necessitating a solution to enhance sensitivity while maintaining cost-effectiveness for mass production.
Innovation Solution
An imaging device with a first electrode made of amorphous oxide semiconductor material and a photoelectric converter using compound semiconductor material, where the first electrode is formed on the light entering side to reduce absorption of near-infrared wavelengths, allowing for improved sensitivity and cost-efficient production.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If ITO is used as an electrode material in an infrared sensor, then the electrode can be formed with good electrical conductivity and transparency in the visible range, but absorption increases in the near-infrared range causing decreased sensitivity
Solution Approach 1:
The patent changes the physical state parameter of the ITO material from crystalline to amorphous by controlling the deposition conditions (low temperature, specific sputtering parameters). This parameter change reduces the absorption coefficient in the near-infrared range while maintaining electrical conductivity, directly resolving the contradiction between transparency and absorption.
2Object-affected harmful factors
If a different electrode material is used to reduce near-infrared absorption, then sensitivity may improve, but manufacturing cost and process complexity increase
Solution Approach 1:
The patent makes ITO serve multiple functions: it acts as both the electrode material and the transparent conductive layer without requiring additional specialized materials. By achieving near-infrared transparency through amorphous state control, the same ITO layer fulfills both electrical conduction and optical transparency requirements across a broader wavelength range, eliminating the need for alternative materials.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The configuration reduces light absorption in the infrared range, enhancing sensitivity and enabling the use of ITO as a general transparent electrode material, facilitating mass production while maintaining stable optical properties.
Implementation Method 1
the ITO exhibits absorption with respect to a wavelength in a near-infrared range or longer, for example
Implementation Method 2
An imaging device that performs photoelectric conversion on a wavelength in a visible range
Data Source
AI summary
An imaging device according to one embodiment of the present disclosure includes a first electrode, a second electrode, and a photoelectric converter. The first electrode includes an oxide semiconductor material having an amorphous state. The second electrode is opposed to the first electrode. The photoelectric converter is provided between the first electrode and the second electrode, and includes a compound semiconductor material.