Graduated Dummy Pattern Layout Around TSVs to Reduce Warpage

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Solution Overview

Problem

Existing through-silicon via (TSV) formation processes lead to warpage issues in device dies and wafers, which are not adequately addressed by current methods.

Innovation Solution

The introduction of dummy patterns around TSVs with varying pattern densities, where regions closer to the TSV have lower densities and those farther away have higher densities, to mitigate warpage.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If conventional TSV formation processes are used, then the manufacturing process is simple, but warpage issues occur in device dies and wafers

Engineering Contradiction:

Improvewarpage reductionVSAvoidprocess complexity

Core Design Contradiction:

ReliabilityVSDevice complexity

Solution Approach 1:

Dummy patterns are formed in advance around TSV locations before the TSV etching process. This preliminary action compensates for anticipated stress and warpage issues that would occur during and after TSV formation, preventing warpage problems before they manifest in the final product.

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

Dummy patterns are strategically placed only in specific regions around TSVs where warpage is most likely to occur, rather than uniformly across the entire wafer. The pattern density varies locally - higher density near TSVs and lower density farther away - to provide targeted stress compensation exactly where needed.

Inventive Principle:

Principle #3Local quality

2Manufacturing precision

If dummy patterns with varying densities are introduced around TSVs, then warpage is reduced, but manufacturing complexity increases

Engineering Contradiction:

Improvewarpage controlVSAvoidpattern design complexity

Core Design Contradiction:

Manufacturing precisionVSDevice complexity

Solution Approach 1:

The dummy pattern region around each TSV is divided into multiple zones with different pattern densities. The first dummy pattern region has a higher density of dummy patterns, while the second dummy pattern region has a lower density. This segmentation allows precise control of stress compensation at different distances from the TSV.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The pattern density parameter of dummy patterns is systematically varied based on distance from the TSV. By changing the density parameter - higher near the TSV, lower farther away - the solution optimizes stress compensation effectiveness while providing a clear, manufacturable pattern design rule.

Inventive Principle:

Principle #35Parameter changes

Data Source

PatentUS20250343140A1Gradually changed dummy pattern distribution around tsvs

Publication Date: 2025.11.06 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

A method includes forming an integrated circuit device on a semiconductor substrate, forming a through-via penetrating through the semiconductor substrate, and forming dummy patterns surrounding the through-via. The dummy patterns include a first plurality of dummy patterns having a first pattern density, and a second plurality of dummy patterns. The first plurality of dummy patterns are between the through-via and the second plurality of dummy patterns. The second plurality of dummy patterns have a second pattern density different from the first pattern density.