Dummy Silicon Package Layout for Warpage-Resistant Chip Connections

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Solution Overview

Problem

Existing packages face challenges in providing better performance and reliability due to warpage issues that can lead to cracking of joints and unreliable connections between components.

Innovation Solution

Incorporating a dummy silicon structure laterally between integrated devices within a package, which is encapsulated by an encapsulation layer, helps to reduce warpage and improve the reliability of joints and connections.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If integrated devices are coupled closely together on a substrate, then package density and electrical performance are improved, but warpage occurs leading to joint cracking and unreliable connections

Engineering Contradiction:
Improveconnection reliabilityVSAvoidpackage warpage
Core Design Contradiction:
ReliabilityVSStability of the object's composition

Solution Approach 1:

The patent introduces a dummy silicon structure with specific material properties (different thermal expansion coefficient and modulus of elasticity) at a localized position between integrated devices. This local structural modification creates differential stress distribution that counteracts the overall package warpage, allowing closely coupled devices to maintain reliable connections without requiring uniform material composition throughout the entire package.

Inventive Principle:
Principle #3Local quality

Solution Approach 2:

The dummy silicon structure functions as a mechanical counterweight that balances the thermal and mechanical stresses generated by the integrated devices. By positioning this compensating structure strategically between devices, the patent creates an opposing stress field that neutralizes the warpage forces, preventing joint cracking and maintaining connection integrity under thermal cycling conditions.

Inventive Principle:
Principle #8Anti-weight (Counterweight)

2Reliability

If dummy silicon structure is added between integrated devices, then warpage is reduced and connection reliability is improved, but device complexity and manufacturing steps increase

Engineering Contradiction:
Improvejoint reliabilityVSAvoidpackage structure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The dummy silicon structure serves multiple functions simultaneously: it acts as a mechanical stress compensator to reduce warpage, provides a placeholder for future device integration, and maintains the structural integrity of the package during assembly. This multi-functionality reduces the need for additional separate components, thereby limiting the increase in overall device complexity while achieving improved joint reliability.

Inventive Principle:
Principle #6Universality (Multi-functionality)

Solution Approach 2:

The dummy silicon structure acts as an intermediary element between the substrate and the encapsulation layer, mediating the thermal and mechanical stresses that would otherwise directly transmit between integrated devices. This intermediate structure absorbs and distributes stresses, protecting the critical joint interfaces without requiring fundamental changes to the overall package architecture or manufacturing process.

Inventive Principle:
Principle #24Intermediary (Mediator)

Data Source

PatentUS20260068780A1Package comprising dummy silicon structure located between integrated devices
Publication Date: 2026.03.05 QUALCOMM INC
  • US20260068780A1 patent drawing
  • US20260068780A1 patent drawing
  • US20260068780A1 patent drawing

AI summary

A package comprising a first metallization portion; a second metallization portion; a first passive device coupled to the second metallization portion; a first encapsulation layer located between the first metallization portion and the second metallization portion; a first integrated device coupled to the first metallization portion; a second integrated device coupled to the first metallization portion; a dummy silicon structure located laterally between the first integrated device and the second integrated device; and a second encapsulation layer coupled to the first metallization portion, wherein the second encapsulation layer at least partially encapsulates the first integrated device, the second integrated device and the dummy silicon structure.