Dummy Structure Layout Between Active Patterns for MOSFET Reliability
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Solution Overview
Problem
As semiconductor devices are scaled down, operation characteristics deteriorate due to increased integration, leading to performance degradation and reliability issues.
Innovation Solution
Incorporation of dummy structures with specific configurations, including line portions and connection portions, between active patterns to manage stress and prevent defects, enhancing device performance and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If metal-oxide-semiconductor field effect transistors are scaled down to increase integration, then device density is improved, but operation characteristics deteriorate
Solution Approach 1:
A dummy structure is introduced as an intermediary element between active patterns. This dummy structure includes a first line portion, a second line portion, and a connection portion that connects them. The dummy structure acts as a mediator to manage stress and prevent defects in the scaled-down transistor environment, thereby maintaining operation characteristics while allowing high integration density.
Solution Approach 2:
The dummy structure is segmented into distinct functional portions: a first line portion, a second line portion, and a connection portion. This segmentation allows each portion to serve specific functions in stress management and defect prevention, enabling the overall structure to effectively address reliability issues in scaled-down devices while maintaining high integration.
2Reliability
If dummy structures are added between active patterns to manage stress, then reliability is improved, but device complexity increases
Solution Approach 1:
The dummy structure is strategically placed only between active patterns where stress management is needed, rather than uniformly throughout the device. The structure consists of specific portions (first line portion, second line portion, and connection portion) that are configured to address local stress and defect issues, thereby improving reliability without unnecessarily increasing overall device complexity.
Data Source
AI summary
A semiconductor device includes: a first active pattern; a first source/drain pattern disposed on the first active pattern; a second active pattern spaced apart from the first active pattern in a first direction; a second source/drain pattern disposed on the second active pattern; a gate electrode overlapping the first active pattern and extending in a second direction intersecting the first direction; and a dummy structure disposed between the first active pattern and the second active pattern and between the first source/drain pattern and the second source/drain pattern, wherein the dummy structure includes: a first line portion extending in the second direction; a second line portion extending in the second direction and spaced apart from the first line portion in the first direction; and a first connection portion connecting the first line portion and the second line portion to each other.