Nanoinformatics TRIZ Cases

A vertically connected gate contact and via structure boosts semiconductor integration density while improving gate connection reliability.

A boron nitride and oxygen-free dielectric spacer stack lowers parasitic capacitance in fin structures while resisting oxidation damage.

A stepped backside contact with liner insulation improves source/drain connectivity and power delivery in stacked-channel semiconductor structures.

Vertically stacked channels and stepped active contacts cut contact resistance and preserve MOSFET reliability during scaling.

Different inner and outer gate work functions help scaled GAA stacks cut capacitance, preserve on-current, and ease multi-Vt fabrication.

A graded inner spacer and high-k gate dielectric help stacked semiconductor channels improve switching behavior while limiting leakage in scaled MOSFETs.

Backside partial cuts remove excess gate metal and separate merged epitaxial regions, lowering capacitance in scaled FinFET layouts.

Staggering source/drain regions increases spacing in nanostructure transistors, reducing merging risk and helping maintain yield at smaller nodes.

Self-assembled nucleic acid templates fix and align carbon nanotube channels at small pitch, overcoming assembly disorder beyond lithography limits.

An insulating layer and wraparound gate define nanosheet channel width while reducing leakage current and parasitic capacitance.

Bottom dielectric isolation and segmented substrate islands enable epitaxial source/drain growth while cutting leakage in hybrid pFET/nFET nanosheets.

A sacrificial spacer enables cavity etching and dielectric fill under channel layers, improving substrate isolation in horizontal transistors.

Dielectric isolation inserted between adjacent source/drain regions prevents epitaxial merging and electrical bridging in scaled transistors.

An isolation structure between stacked CFET nanostructures prevents gate metal interference, stabilizing threshold voltage and improving yield.

Variable conductive liner and inner gate thickness improve stacked FinFET electrical characteristics while easing gate dielectric thickness control.

Diffusing overlapping dipole layers into gate dielectrics enables opposite threshold-voltage shifts with fewer process steps and better device reliability.

Hammer-shaped sheet separation walls between nanosheet stacks secure gate patterning margins, preserve channel width, and reduce leakage.

Dopants in SiGe or Si sacrificial layers counter strain relaxation during etching, preserving nanoribbon transistor geometry and electrical performance.

Template-guided selective and conformal WF metal deposition stabilizes GAA transistor threshold voltage while reducing patterning variability and oxidation.

Dielectric fins interleaved between GAA SRAM transistors improve gate control and suppress short-channel effects for more stable memory operation.

By linking adjacent GAA gate structures under isolation features, this case enables accurate gate resistance extraction for RC delay design.

Back-side channel depopulation lets GAA transistors vary drive current without adding front-side complexity, helping reduce yield loss and variability.

Varying cutting-pattern widths across gate regions helps dense MOSFET layouts maintain gate-width precision, speed, and low resistance.

A shared-gate transistor layout creates varied channel lengths through series-connected regions, improving analog integration density with less layout overhead.

Heat-pulsed pyroelectric gate dielectrics let one transistor switch threshold voltage after fabrication, balancing leakage and switching speed.

Capacitors formed directly on trench isolation use the gate and source/drain contact as electrodes to raise capacitance while avoiding leakage in GAA fabrication.

A connected dummy structure between active patterns manages stress and defect risk in scaled MOSFETs, helping preserve electrical characteristics.

An active cut spaced from the upper gate helps stacked nanosheet transistors suppress short channel effects and shrink cell area.

A dual-dielectric gate stack uses high-k and low-k layers to cut parasitic capacitance while preserving process stability in GAA transistors.

Varying inner spacer width and nanoribbon thickness lets GAA chips raise threshold voltage and cut leakage across logic and memory devices.

Using silicon nitride and metal oxide boundary walls, this case tunes NMOS and PMOS strain while reducing gate cut depth and metal-fill voids.

Backside conductive feed-throughs cut IC power resistance while supporting smaller standard cells and flexible cell placement.

Hammer-shaped sheet separation walls secure gate patterning margin, preserve channel width, and help block leakage in nanosheet FETs.

Wrap-around contacts and backside power delivery cut contact resistance and layout area in sub-10 nm zero diffusion break transistors.

Separate plasma etch passes form narrow and wide gate cuts to nearly equal height, limiting loading effects and backside structure disruption.

A uniform gate grid with trench contact cuts eases forksheet transistor spacing limits while preserving mobility and short-channel control.

A plug-last cut plug structure narrows gate-contact spacing in nanowire and fin ICs while reducing variation and avoiding voided metal fill.

Removing inner spacers and grading Ge in SiGe source/drain regions prevents crystal defects and improves channel stress transfer and mobility.

Internal spacers and vertical isolation barriers enable self-aligned GAA nanowire scaling below 10 nm while easing lithography and via integration.

A convex gate sidewall formed by differential SiGe etching improves high-K deposition and metal gate-to-source/drain reliability in GAA transistors.

Metal-doped high-K gate dielectrics tune dipoles and work function to deliver multiple FET threshold voltages without thinner metal layers.

Multi-patterning and self-aligned GAA formation enable smaller-pitch nano-FETs with precise channels, better electrical behavior, and reliability.

Active dummy connection layers let adjacent 3D DRAM gates form together, simplifying processing while reducing leakage current.

A through-via links front and back wiring across a cutting structure, enabling dense stacked multi-gate transistors with stronger current control.

A unified dielectric cut plug forms gate and trench contact links in one self-aligned step, cutting variation while preserving tight IC spacing.

Different low-k spacer dielectrics and nanosheet tuning let CFET N- and P-type transistors optimize carrier transport while cutting parasitic capacitance.

Vertically embedded semiconductor needles support crack-free, dislocation-filtered III-V epitaxy on silicon with less buffer thickness and process time.

Distinct work function films in a multi-gate transistor enable multiple threshold voltages for better current control and short-channel suppression.

Position-based gas supply keeps concentration uniform across imprint regions, reducing bubbles, unfilling defects, and alignment drift.

Vertically stacked 2D-material channels with a gate-all-around structure improve transistor scaling while suppressing leakage and short-channel effects.