Trench Isolation Capacitor Layout for Low-Leakage GAA Structures
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Solution Overview
Problem
Existing semiconductor structures fail to provide low leakage capacitors using conventional fabrication methods, particularly in gate-all-around (GAA) processes.
Innovation Solution
A semiconductor structure with a trench isolation feature, a gate structure, and a source/drain contact, where the gate structure and the source/drain contact are disposed directly on the trench feature, forming capacitors that are electrically coupled to a first power terminal.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional fabrication methods are used to create capacitors in gate-all-around (GAA) processes, then the manufacturing process remains simple, but the capacitor exhibits high leakage
Solution Approach 1:
The capacitor structure is segmented into distinct components: a first electrode formed in the trench isolation region, a second electrode formed in the active region, and a dielectric layer separating them. This segmentation allows each component to be optimized independently for low leakage performance while maintaining manufacturing feasibility
Solution Approach 2:
A dielectric layer is introduced as an intermediary between the first electrode (in trench isolation) and the second electrode (in active region). This dielectric mediator prevents direct electrical contact that would cause leakage, while allowing the capacitor to be formed using standard fabrication processes
2Quantity of substance
If the gate structure and source/drain contact are disposed directly on the trench isolation feature, then the capacitance increases, but the manufacturing precision requirements increase
Solution Approach 1:
The trench isolation structure serves multiple functions: it provides electrical isolation for the capacitor's first electrode, defines the capacitor geometry, and integrates with the existing GAA fabrication process flow. This multi-functionality increases capacitance without requiring separate manufacturing steps
Solution Approach 2:
The first electrode is formed in the trench isolation region during preliminary fabrication steps before the active region processing. This preliminary action establishes the capacitor foundation early in the process, reducing subsequent alignment complexity and enabling greater capacitance
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a trench isolation feature, a gate structure, and a source/drain contact. The gate structure and the source/drain contact next to the gate structure are disposed directly on the trench isolation feature. The gate structure and the source/drain contact form electrodes of a capacitor.