Semiconductor Gate Cutting Layout for Dense MOSFET Integration
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Solution Overview
Problem
As semiconductor devices are scaled down, existing technologies face challenges in efficiently integrating metal oxide semiconductor field effect transistors (MOSFETs) due to the need for precise and efficient gate electrode and cutting pattern configurations that maintain performance and functionality.
Innovation Solution
A semiconductor device design featuring a substrate with distinct active regions, gate electrodes, and cutting patterns that vary in width and configuration to optimize transistor performance, including a gate dielectric layer, gate spacers, and metal layers to enhance electrical connectivity and separation, allowing for three-dimensional field effect transistors (MBCFET or GAAFET) operation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If gate electrode width is reduced to increase channel density, then device integration is improved, but manufacturing precision becomes more difficult to maintain
Solution Approach 1:
The cutting pattern is designed with non-uniform width: wider at the first gate electrode region and narrower at the second gate electrode region. This local variation in pattern dimensions allows each gate electrode to receive appropriate width control during fabrication, maintaining manufacturing precision across different device regions while achieving high overall channel density
Solution Approach 2:
The substrate is divided into first and second regions with different gate electrode width requirements. The cutting pattern is segmented into a first part (wider) and second part (narrower) to match these regional requirements, enabling differentiated precision control for each segment while maintaining high integration density
2Manufacturing precision
If cutting pattern width varies to match gate electrode widths, then manufacturing precision is improved, but device complexity increases
Solution Approach 1:
The cutting pattern intentionally employs asymmetric width variation - wider at the first part and narrower at the second part - rather than using a uniform or symmetric design. This asymmetric configuration directly matches the asymmetric width requirements of the first and second gate electrodes, improving alignment precision while the systematic nature of the asymmetry keeps the overall device structure manageable
Data Source
AI summary
A semiconductor device including a substrate that includes first and second regions; a first active pattern on the first region and a second active pattern on the second region; a first gate electrode on the first active pattern and a second gate electrode on the second active pattern; and a first cutting pattern that penetrates the first gate electrode and a second cutting pattern that penetrates the second gate electrode, wherein a width of the first gate electrode as measured in one direction is less than a width of the second gate electrode, a maximum width of the first cutting pattern is greater than the width of the first gate electrode, and a minimum width of the second cutting pattern is less than the width of the second gate electrode.