Shared-Gate Transistor Layout for Mixed Channel Lengths
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Solution Overview
Problem
Existing integrated circuits face challenges in efficiently integrating transistors with varying channel lengths due to semiconductor process limitations, leading to reduced performance and increased layout inefficiencies.
Innovation Solution
The integrated circuit design includes transistors with uniform channel lengths achieved by connecting multiple transistors in series, sharing source/drain regions, and using parallel gate electrodes to maintain efficient integration and reduce layout overhead.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If transistors with varying channel lengths are integrated using conventional semiconductor processes, then devices with various characteristics can be created, but integration efficiency decreases and layout overhead increases
Solution Approach 1:
The patent segments the transistor channel into distinct regions: a first channel region with a first channel length and a second channel region with a second channel length. This segmentation allows the single transistor structure to provide multiple channel lengths simultaneously, resolving the contradiction between having varied channel lengths and maintaining integration efficiency. The segmentation is achieved through separate doping regions and gate electrode structures that can be independently controlled during fabrication.
Solution Approach 2:
The patent creates a universal transistor structure that serves multiple functions by incorporating both first and second channel length regions within a single device. This multi-functional design eliminates the need for separate transistor structures for different channel lengths, thereby improving integration efficiency while maintaining the versatility to provide various channel lengths for different circuit requirements.
2Adaptability or versatility
If transistors with varying channel lengths are integrated using conventional processes, then various device characteristics are achieved, but layout overhead and space requirements increase
Solution Approach 1:
The patent merges multiple channel length functionalities into a single transistor structure by combining first and second channel length regions. This merging approach eliminates the need for separate transistor structures that would occupy additional layout space, thereby reducing layout overhead while maintaining the ability to provide various channel lengths for different circuit functions.
Solution Approach 2:
The patent introduces a new dimensional approach by creating channel length variation along the channel direction rather than requiring separate lateral transistor structures. The first channel region and second channel region are arranged sequentially along the current flow path, utilizing the longitudinal dimension to provide multiple channel lengths without increasing the transistor footprint area, thus reducing layout overhead.
3Manufacturing precision
If multiple transistors are connected in series to achieve various channel lengths, then uniform channel length transistors are created, but device complexity increases
Solution Approach 1:
The patent applies local quality by creating distinct channel length regions with different doping characteristics and gate control within a single transistor structure. The first channel region and second channel region have different channel lengths and can have different doping concentrations, allowing precise control over the electrical characteristics of each segment while maintaining a unified device structure that avoids the complexity of multiple separate transistors.
Data Source
AI summary
An integrated circuit includes: a first device region and a second device region extending parallel to each other on a substrate in a first direction; a first gate electrode extending in a second direction and intersecting with the first device region and the second device region; a first transistor including the first gate electrode and a first channel having a first conductive-type in the first device region; and a second transistor including the first gate electrode and a second channel having the first conductive-type in the second device region, wherein a first source/drain region of the first transistor is electrically connected to a first source/drain region of the second transistor, and wherein a second source/drain region of the first transistor is electrically disconnected from a second source/drain region of the second transistor.