Back-Side Channel Depopulation in GAA Transistors for Drive Current Tuning

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Solution Overview

Problem

Existing transistor architectures face challenges in achieving varying drive currents for different applications within a single integrated circuit (IC) due to the complexity of depopulating channel regions, which can lead to increased IC die yield issues and variability in front-side processing.

Innovation Solution

The implementation of back-side channel depopulation techniques in gate-all-around (GAA) transistor structures allows for the selective removal or inactivation of channel regions from the lower portion of the transistor stack, reducing complexity and variability while enabling different drive currents across transistors within a double-sided IC.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If front-side processing is used to depopulate channel regions, then different drive currents can be achieved, but IC die yield issues and variability increase

Engineering Contradiction:

Improvedrive current variationVSAvoidIC die yield

Core Design Contradiction:

Adaptability or versatilityVSReliability

Solution Approach 1:

The patent inverts the conventional approach by performing channel depopulation from the back side of the substrate rather than the front side. This allows selective removal of channel regions to achieve different drive currents while avoiding the complexity and variability issues associated with front-side processing, thereby improving IC die yield

Inventive Principle:

Principle #13The other way round (Inversion)

2Adaptability or versatility

If front-side processing is complicated to achieve depopulation, then different drive currents can be achieved, but manufacturing complexity increases

Engineering Contradiction:

Improvedrive current variationVSAvoidprocessing complexity

Core Design Contradiction:

Adaptability or versatilityVSEase of manufacture

Solution Approach 1:

The patent simplifies manufacturing by inverting the processing approach - instead of complicating front-side processing to achieve channel depopulation, it performs the depopulation from the back side of the substrate. This reduces manufacturing complexity while still enabling different drive currents through selective channel region removal

Inventive Principle:

Principle #13The other way round (Inversion)

Data Source

PatentUS12513984B2Double-sided integrated circuit transistor structures with depopulated bottom channel regions

Publication Date: 2025.12.30 INTEL CORP

AI summary

Integrated circuitry comprising interconnect metallization on both front and back sides of a gate-all-around (GAA) transistor structure lacking at least one active bottom channel region. Bottom channel regions may be depopulated from a GAA transistor structure following removal of a back side substrate that exposes an inactive portion of a semiconductor fin. During back-side processing, one or more bottom channel region may be removed or rendered inactive through dopant implantation. Back-side processing may then proceed with the interconnection of one or more terminal of the GAA transistor structures through one or more levels of back-side interconnect metallization.