Nanosheet FET Separation Wall Structure for Patterning Margin
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Solution Overview
Problem
The rapid down-scaling of integrated circuit devices increases the likelihood of process defects in nanosheet field-effect transistors, affecting performance and reliability.
Innovation Solution
The integrated circuit device incorporates a novel structure with hammer-shaped or nail-shaped sheet separation walls between nanosheet stack structures, securing patterning margins, increasing effective channel width, and preventing leakage current, thereby enhancing manufacturing ease and reliability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional nanosheet field-effect transistor structures are used, then device density is maintained, but process defects increase and reliability decreases due to rapid down-scaling
Solution Approach 1:
The device structure is segmented into multiple nanosheet stack structures (first and second stacks) separated by sheet separation walls. This segmentation allows independent formation and reduces process defects in each stack, improving overall manufacturing precision and reliability while maintaining high device density.
Solution Approach 2:
Sheet separation walls are introduced as intermediary structures between adjacent nanosheet stack structures. These walls provide physical separation that prevents defect propagation and enables independent processing, thereby reducing overall process defect rates and improving transistor reliability during down-scaling.
2Reliability
If sheet separation walls are added between nanosheet stacks, then patterning margins are secured and reliability improves, but device structure complexity increases
Solution Approach 1:
The complex structure is divided into modular nanosheet stacks separated by standard sheet separation walls. Each module can be formed using similar processes, making the complexity manageable and repeatable, thereby improving manufacturing reliability without prohibitive complexity increases.
Solution Approach 2:
The sheet separation walls serve multiple functions: they provide patterning margins, act as physical barriers between stacks, and enable independent processing. This multi-functionality justifies the added structural complexity by delivering multiple reliability benefits simultaneously.
3Stability of the object's composition
If hammer-shaped or nail-shaped sheet separation walls are used, then leakage current is prevented and performance stability improves, but manufacturing complexity increases
Solution Approach 1:
The sheet separation walls feature localized geometric variations (hammer-shaped or nail-shaped profiles) at specific locations to prevent leakage current paths. This local quality enhancement targets specific performance issues without requiring complex manufacturing throughout the entire device, maintaining reasonable ease of manufacture while improving performance stability.
Solution Approach 2:
The complex wall shapes are designed to convert potential leakage pathways into beneficial features by creating physical barriers and electric field management structures that actively prevent leakage, transforming what would be simple separation walls into active reliability enhancement elements.
Data Source
AI summary
An integrated circuit device includes a hammer-shaped sheet separation wall between nanosheet stack structures, thereby improving a patterning margin of a gate electrode and preventing or reducing an effective channel width from being decreased. That is, the integrated circuit device may provide increased stable performance and improved reliability in a nanosheet field-effect transistor.