Dynamic On-Die Termination Resistance Control for Memory Signal Integrity

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Solution Overview

Problem

On-die termination (ODT) technologies increase power consumption while attempting to enhance signal integrity in semiconductor integrated circuits, as they require constant impedance matching across transmission lines, which is challenging to manage efficiently.

Innovation Solution

A method of controlling ODT by dynamically setting resistance values of ODT circuits in memory systems to different values during write and read operations, optimizing impedance matching to reduce signal reflection and power consumption.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If ODT is implemented to enhance signal integrity, then signal reflection is reduced, but power consumption is increased

Engineering Contradiction:
Improvesignal integrityVSAvoidpower consumption
Core Design Contradiction:
ReliabilityVSUse of energy by moving object

Solution Approach 1:

The patent applies dynamics by making the ODT resistance value adjustable and changeable based on operational conditions. The ODT circuit transitions from a static fixed resistance configuration to a dynamic adjustable resistance configuration, allowing the system to optimize between signal integrity and power consumption by selecting appropriate resistance values during different operational phases such as write operations, read operations, and idle states.

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The patent implements parameter changes by varying the resistance value of the ODT circuit according to different operational modes. The resistance parameter is changed from a single fixed value to multiple selectable values (e.g., first resistance value during write operations, second resistance value during read operations, third resistance value during idle states), enabling the system to adapt impedance matching to specific operational requirements and reduce overall power consumption.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If ODT resistance value is set to optimize signal integrity, then signal reflection is minimized, but impedance matching becomes difficult to manage efficiently

Engineering Contradiction:
Improvesignal integrityVSAvoidimpedance matching management
Core Design Contradiction:
ReliabilityVSEase of operation

Solution Approach 1:

The patent applies feedback by implementing a control mechanism that automatically selects and adjusts the ODT resistance value based on the current operational state of the memory system. The controller monitors operational conditions (write operation, read operation, idle state) and provides feedback control signals to configure the appropriate resistance value, thereby simplifying impedance matching management while maintaining signal integrity.

Inventive Principle:
Principle #23Feedback

Solution Approach 2:

The patent implements self-service by enabling the ODT circuit to automatically configure its own resistance value based on operational conditions without requiring external manual intervention. The system self-adjusts the impedance matching parameters through internal control logic that responds to operational states, making the system easier to manage while maintaining optimal signal integrity.

Inventive Principle:
Principle #25Self-service

Data Source

PatentUS11302384B2Method of controlling on-die termination and memory system performing the same
Publication Date: 2022.04.12 SAMSUNG ELECTRONICS CO LTD
  • US11302384B2 patent drawing
  • US11302384B2 patent drawing
  • US11302384B2 patent drawing

AI summary

In a method of controlling on-die termination (ODT) in a memory system including a plurality of memory units that shares a data bus to transfer data, ODT circuits of the plurality of memory units are enabled into an initial state, a resistance value of the ODT circuit is set to a first resistance value, of at least one write non-target memory unit among the plurality of memory units during a write operation on a write target memory unit among the plurality of memory units, and a resistance value of the ODT circuit is set to a second resistance value, of at least one read non-target memory unit among the plurality of memory units during a read operation on a read target memory unit among the plurality of memory units.