Solid-State Devices TRIZ Cases

A tiered imprint lithography template patterns formable layers on substrates with varying elevations without requiring planarization.

A base metal layer beneath a silver thin film suppresses islanding to stabilize electrical conductivity and light transmittance in organic EL elements.

Al-doped strontium orthosilicate green phosphor combats temperature quenching to preserve color balance in high-load LEDs.

Merging touch electrodes with display data lines reduces device weight and manufacturing complexity by eliminating separate touch substrates.

An on-chip interface copies data between NAND flash memory and resistive random access memory.

Simultaneous coating and drying prevents thermal deformation and ensures uniform layer thickness.

A magnetic memory device uses a single selection transistor to perform both write and read operations via spin orbit torque.

Randomized neuron selection triggers conductance resets in neuromorphic circuits, reducing power consumption while maintaining learning accuracy.

A time-of-flight image sensor uses temporal segmentation to separate reflected light pulses from background intensity.

Divided pad portions distribute probe contact stress across multiple segments to maintain compact semiconductor device dimensions.

Dielectric layers adjoin conductive strip sidewalls at different positions to prevent bending during manufacturing of stacked memory devices.

Color-specific light-shielding film opening distances compensate for oblique viewing angle chromaticity shifts while maintaining high pixel density.

A 3D stacked image sensor separates phase detection and imaging substrates to enable fast autofocus.

Wafer bonding stacks cell arrays over peripheral circuits, resolving manufacturing complexity while maintaining operational reliability.

Attaching an upper passivation film protects the fragile thin film encapsulation layer from damage during cutting, preventing defects and boosting yield.

A CMOS image sensor structure uses concentric reflective layers with decreasing refractive indexes to direct light toward photodiodes.

Screen printing deposits an insulating protective layer on transparent electrode edges to simplify manufacturing processes.

Segmented quantum barriers reduce lattice mismatch and piezoelectric fields to improve electron-hole wave function overlap and recombination efficiency.

A quantum dot display device uses a light focusing layer to direct emitted light toward color filters for efficient wavelength conversion.

Segmented substrate regions with penetrating insulation members enable reliable electrical connections for light emitting chips while preventing short circuits.

Dual-stage roughening creates sub-scattering portions that resolve the trade-off between manufacturing complexity and light extraction efficiency.

A display device uses a non-display area with an upper compensation layer to fill gaps between encapsulation layers.

Higher resistance nonlinear elements in data line protection circuits minimize leakage currents that interfere with photoelectric conversion element readout.

Composite emission layer compounds balance charge transport to lower driving voltage, addressing high resistance and poor efficiency in single-host systems.

A CR snubber element uses a secondary resistance path that disconnects upon capacitor short-circuit to maintain surge suppression.

A bit line current controlling circuit adjusts voltage to increase current supply when temperature drops.

Forming the substrate diode prior to gate patterning stabilizes PN junctions and improves thermal sensing accuracy by eliminating nickel silicide interference.

A reflective structure surrounds quantum dot filter layers to redirect scattered light and improve emission efficiency.

Inclined recessed side walls on micro LEDs enable high-yield transfer by improving positioning accuracy despite reduced element size.

Auxiliary layer adhesion differences guide metal vapor to pattern cathodes, reducing exciton quenching and boosting luminance efficiency.

Series-connected metal-insulator-metal capacitors use vertical blind vias to couple plates within integrated circuit back-end structures.

Flush metal source onto insulation layer to improve ruthenium adherence for uniform storage node formation.

High magnetic damping in the second free layer reduces switching current and eliminates write errors by optimizing spin-orbit coupling dynamics.

A photolithography mask aligns via holes in transparent conductive and organic layers, preventing short circuits and trace mura defects caused by misalignment.

Recessed conductive layer side surfaces enable continuous variable resistance films on interlayer insulators, improving withstand voltage between memory cells.

A common electrode with a hollowed-out portion covering the channel region reduces parasitic capacitance and improves electron mobility.

UV activation crosslinks charge transport materials around quantum dots, preventing light output degradation under environmental stress.

A laminated metal layer with a narrower third titanium layer prevents undercutting in array substrates, avoiding short circuits and packaging failures.

Pre-formed ring barrier layer bonds to OLED encapsulation film edges.

Merging pixel electrodes and upper capacitor electrodes into a single conductive layer reduces step differences to increase aperture ratios.

Replacing a LOCOS-formed oxide layer with a transistor gate eliminates mask alignment errors and improves charge transfer efficiency.

An oxide semiconductor transistor employs a dual-layer insulator to remove hydrogen contamination and fill oxygen vacancies, reducing threshold voltage shifts.

An organic semiconductor injection layer uses shared electrode structures to enhance charge carrier injection efficiency across adjacent components.

Segmented electrical traces accommodate various LED dimensions, eliminating separate board designs to reduce manufacturing costs and inventory complexity.

A patterned release layer decomposes into gas to separate devices, resolving fragility issues during manufacturing and improving yield.

Segmenting the display panel side surface into distinct zones prevents short circuits between separated electrode pads while maintaining bonding reliability.

Composite hosts balance charge transport to prevent uneven emission regions, extending device lifespan.

A multi-layer encapsulation system integrates a getter material within an adhesive layer to enhance adhesion and retard gas diffusion.

Tapered conductive plugs with wider lower bases resolve overlay margin issues while maintaining high integration density in advanced DRAM fabrication.

Single mask hybrid layer deposition resolves thermal expansion alignment errors while lowering manufacturing costs for large area OLED substrates.