Organic Semiconductor Patterning via Selective Solvent Dissolution

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Solution Overview

Problem

Existing methods for patterning organic semiconductor layers in active matrix organic light emitting displays (OLEDs) face challenges such as non-uniformity, high costs, and potential for cross-talk between adjacent transistors due to complex and expensive photolithography processes, as well as non-uniformity caused by direct patterning technologies like inkjet printing.

Innovation Solution

A method involving the selective application of a chemical solvent, such as chloroform or tetrahydrofuran, to a continuous organic semiconductor layer using inkjet printing, which dissolves and removes the solvent from specific regions, creating a patterned structure with significantly varying thicknesses between regions to prevent cross-talk and ensure uniformity, utilizing a combination of solution coating and inkjet printing for OSC layer deposition and patterning.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If photolithography including etching processes is used to pattern OSC material, then patterning precision is improved, but device complexity and manufacturing cost increase significantly

Engineering Contradiction:
Improvepatterning precisionVSAvoidprocess complexity
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent extracts and removes the harmful etching processes from the photolithography sequence, replacing them with a selective dissolution approach using solvent application. This eliminates the need for complex mask formation, etching, and mask removal steps while achieving the desired patterning effect through selective chemical dissolution of the OSC material in non-active areas.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent introduces a solvent (such as chloroform or toluene) as an intermediary substance that selectively dissolves the OSC material in non-active regions. This solvent acts as a mediator between the pattern definition requirement and the OSC material removal, enabling precise patterning without the need for complex photolithography equipment and processes.

Inventive Principle:
Principle #24Intermediary (Mediator)

2Ease of manufacture

If inkjet printing is used for additive patterning of OSC material, then manufacturing cost is reduced, but manufacturing precision deteriorates due to non-uniform layer profile

Engineering Contradiction:
Improvemanufacturing costVSAvoidlayer uniformity
Core Design Contradiction:
Ease of manufactureVSManufacturing precision

Solution Approach 1:

Instead of using inkjet printing to additively build the OSC pattern directly (which causes non-uniformity), the patent inverts the approach by first forming a complete uniform OSC layer through solution coating, then using inkjet printing to apply solvent for selective dissolution. This inversion transforms the inkjet printing function from material deposition to pattern definition, eliminating the uniformity problems while maintaining low cost.

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent uses solvent as an intermediary substance applied via inkjet printing to achieve patterning. The solvent selectively dissolves the OSC material in non-active areas without affecting the active channel regions, enabling precise pattern definition with uniform thickness in the remaining OSC structures, combining the advantages of low-cost inkjet printing with high manufacturing precision.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Device complexity

If non-patterned semiconductor material is used, then device complexity is reduced, but harmful effects increase due to current leakage and cross-talk

Engineering Contradiction:
Improvepatterning process complexityVSAvoidcurrent leakage and cross-talk
Core Design Contradiction:
Device complexityVSObject-generated harmful factors

Solution Approach 1:

The patent extracts and removes the OSC material from non-active regions through selective dissolution, creating isolated patterned channels between adjacent TFTs. This removal eliminates the harmful current leakage paths and cross-talk effects that would otherwise exist in non-patterned structures, achieving electrical isolation without requiring complex patterning processes.

Inventive Principle:
Principle #2Taking out (Extraction)

Solution Approach 2:

The patent employs solvent as an intermediary to selectively remove OSC material in non-active areas, creating physical and electrical isolation between adjacent transistor channels. This solvent-mediated removal process effectively eliminates current leakage and cross-talk harmful effects while maintaining a relatively simple process structure.

Inventive Principle:
Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach results in a cost-effective, highly uniform patterned semiconductor structure with reduced cross-talk between adjacent regions, enhancing the uniformity and brightness of OLED displays while simplifying the patterning process to two inexpensive steps.

Implementation Method 1

selectively applying a chemical compound to a portion of the organic semiconductor layer so as to dissolve the portion

Methodology Applied
Scientific EffectSolvation: Solvation

Data Source

PatentUS8981348B2Semiconducting element, organic light emitting display including the same, and method of manufacturing the semiconducting element
Publication Date: 2015.03.17 SAMSUNG DISPLAY CO LTD
  • US8981348B2 patent drawing
  • US8981348B2 patent drawing
  • US8981348B2 patent drawing

AI summary

A semiconductor element (semiconductor device) including a substrate having a patterned structure of an organic semiconductor material and a method of manufacturing the semiconductor element are disclosed. According to one embodiment, the method of manufacturing the semiconductor element provides a substrate having a patterned structure of an organic semiconductor material which is cost-effective and which realizes a structure having a high degree of uniformity of the patterned semiconductor regions. The method includes: providing the substrate, applying a continuous layer of an organic semiconductor material onto the substrate, applying a solvent onto the continuous layer in the second regions thereby dissolving and removing the organic semiconductor material, which is located in the second regions, from the continuous layer.