Semiconductor Conductive Strip Dielectric Support Structure
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Solution Overview
Problem
Current semiconductor memory devices face challenges in achieving high element density and small size while maintaining excellent properties and stability, particularly in the development of three-dimensional memory devices with multiple stacked planes for increased storage capacity.
Innovation Solution
A semiconductor structure comprising a conductive strip, a conductive layer, and dielectric layers arranged in a crisscross manner, with varying thicknesses and positions to support the conductive strip, enhancing structural integrity and preventing bending issues during manufacturing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If multiple stacked planes are implemented to increase storage capacity, then element density is improved, but structural stability deteriorates due to bending issues in conductive strips
Solution Approach 1:
The conductive strip is segmented into multiple sections by introducing first and second dielectric layers at different positions on the same sidewall. This segmentation prevents the conductive strip from bending as a single continuous structure, thereby maintaining structural stability while preserving high element density through the stacked plane configuration.
Solution Approach 2:
Dielectric layers are introduced as intermediary structures between conductive strips and other components. These dielectric layers act as spacers and support structures that prevent direct contact and potential bending of conductive strips, thereby maintaining structural integrity in the three-dimensional stacked memory device.
2Strength
If dielectric layers are positioned at different locations on the same sidewall, then structural integrity is improved, but device complexity increases
Solution Approach 1:
Different dielectric layers are positioned at specific local positions on the sidewall of conductive strips based on their functional requirements. The first dielectric layer is positioned at a first location while the second dielectric layer is positioned at a second location, allowing each layer to provide localized support and prevent bending at critical points without requiring complex structures throughout the entire device.
Data Source
AI summary
A semiconductor structure is provided. The semiconductor structure includes a conductive strip, a conductive layer, a first dielectric layer, and a second dielectric layer. The first dielectric layer is between the conductive strip and the conductive layer arranged in a crisscross manner. The second dielectric layer is different from the first dielectric layer. The second dielectric layer and the first dielectric layer are adjoined with the conductive strip in different positions on the same sidewall of the conductive strip.