Semiconductor Light-Emitting Device Dual-Stage Scattering Surface
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Solution Overview
Problem
Semiconductor light-emitting devices face challenges in achieving high light extraction efficiency due to the limited effectiveness of existing surface roughening methods in enhancing light radiation.
Innovation Solution
The method involves forming a scattering surface and a sub-scattering portion on the semiconductor film through surface roughening and re-growing semiconductor layers, with the sub-scattering portion being structurally smaller and having air voids, to improve light confinement and extraction efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If a single surface roughening method is applied to the semiconductor film, then the manufacturing process is simple, but the light extraction efficiency is limited
Solution Approach 1:
The patent divides the light extraction enhancement into two distinct segments: a first scattering structure formed on the semiconductor film surface, and a second scattering structure formed on the semiconductor layer surface after epitaxial growth. This segmentation allows each structure to perform specific scattering functions, collectively improving light extraction efficiency beyond what a single structure could achieve, while maintaining manageable manufacturing complexity through sequential processing steps.
Solution Approach 2:
The patent introduces scattering structures at two different dimensional levels: the first scattering structure at the film-substrate interface level, and the second scattering structure at the grown layer surface level. This multi-dimensional approach creates scattering opportunities at different depths and orientations, enhancing overall light extraction by utilizing vertical dimensionality that a single surface treatment cannot provide.
2Loss of energy
If multiple surface roughening steps are applied to enhance light extraction, then the light extraction efficiency improves, but the manufacturing process becomes more complex
Solution Approach 1:
The patent merges the formation of scattering structures with the existing semiconductor manufacturing flow by integrating the first roughening step before epitaxial growth and the second roughening step after growth. Both scattering structure formations are combined into the standard production sequence, allowing light extraction enhancement to be achieved through conventional manufacturing processes rather than requiring separate, complex additional equipment or steps.
Solution Approach 2:
The patent utilizes parameter changes in the epitaxial growth process itself to create the second scattering structure. By adjusting growth conditions such as temperature, pressure, or chemical composition during the epitaxial step, the semiconductor layer naturally forms a roughened surface with scattering properties. This parameter-based approach avoids the need for separate mechanical or chemical roughening equipment, simplifying the overall manufacturing complexity while achieving the desired scattering effect.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach significantly enhances light extraction efficiency by improving the light beam pattern confinement and increasing the overall light output of semiconductor light-emitting devices.
Implementation Method 1
roughening the surface of the multi-layer semiconductor film to form a scattering surface; roughening the semiconductor layer to form a sub-scattering portion on the scattering surface
Implementation Method 2
at least one air void is formed between the scattering surface and the semiconductor layer
Data Source
AI summary
A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.