Dynamic Start Voltage Calculation for 3D NAND Memory Programming
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In 3D NAND devices, determining a reliable dynamic start voltage for caching scenarios is challenging, leading to increased programming latency.
Innovation Solution
Implementing a dynamic start voltage (DSV) calculation method that adjusts the programming voltage based on the number of cells passing a program verify voltage, allowing for efficient programming by avoiding initial low voltages that may lead to overshooting.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of time
If dynamic start voltage calculation is implemented to optimize programming speed, then programming time is reduced, but the complexity of voltage determination mechanisms increases
Solution Approach 1:
The system performs preliminary actions by calculating the dynamic start voltage based on page data characteristics before the actual programming operation begins. The controller determines the optimal start voltage in advance by analyzing the data being programmed, allowing the programming process to start at the correct voltage level immediately, thus reducing programming time without requiring complex real-time voltage adjustment during the operation.
Solution Approach 2:
The system implements feedback mechanisms where the controller monitors programming progress and adjusts voltage accordingly. The dynamic start voltage calculation incorporates feedback about the data characteristics and programming status to determine the optimal voltage level, ensuring efficient programming while managing the complexity through intelligent control algorithms.
2Productivity
If caching mechanisms are used to reduce programming latency, then programming speed is improved, but the reliability of dynamic start voltage determination becomes more challenging
Solution Approach 1:
The controller performs preliminary analysis of the page data characteristics before initiating the programming operation with caching enabled. By determining the dynamic start voltage in advance based on the data being cached and programmed, the system ensures reliable voltage determination while maintaining the speed benefits of caching mechanisms.
Solution Approach 2:
The system introduces an intermediary mechanism where the controller acts as a mediator between the caching system and the programming operation. The controller analyzes the cached data characteristics and determines the appropriate start voltage, ensuring that the caching mechanism's speed advantages are achieved without compromising voltage determination reliability.
3Use of energy by moving object
If initial low voltages are used in programming, then energy consumption is reduced, but cells may overshoot the desired threshold voltage level
Solution Approach 1:
The system dynamically changes the voltage parameter based on the data characteristics and programming status. The controller calculates an optimal start voltage that is higher than initial low voltages but still efficient, preventing overshoot while maintaining energy efficiency. This parameter adjustment ensures precise threshold voltage levels are achieved without excessive energy consumption.
Solution Approach 2:
The system implements feedback control where the controller monitors the programming process and adjusts voltage levels accordingly. By using feedback about the cell response and programming progress, the system prevents overshoot of the desired threshold voltage while maintaining energy-efficient operation, balancing precision and energy consumption through intelligent control.
Data Source
AI summary
A method, a memory chip controller of a flash memory device, and a flash memory device. The memory chip controller includes processing circuitry to receive data for a first page of N pages of data; and program cells of a memory location of the device to an nth threshold voltage level Ln, Ln corresponding to a program verify voltage level PVn, n being an integer from 0 to 2N−1, and Ln being one of 2N threshold voltage levels achievable using the N pages of data. Programming the cells includes: programming the cells based on the data for the first page while receiving data for subsequent pages of the N pages; and programming the cells based on the data for the subsequent pages, wherein programming the cells includes, for at least n=1, causing a respective dynamic start voltage (DSV) to be applied to the cells based on each respective page number p of the N pages for which data is received at the memory chip controller for the memory location to achieve PV1.