Edge Bead Removal Composition for Metal-Containing Resists
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Solution Overview
Problem
The semiconductor industry faces challenges in removing edge beads from metal-containing resists, which can lead to pattern defects and contamination, while requiring high etch resistance, resolution, and sensitivity in photolithographic processes.
Innovation Solution
A composition comprising a polycyclic aliphatic hydrocarbon compound substituted with a carboxyl group and an organic solvent is used to remove edge beads from metal-containing resists, enhancing solubility and reducing line edge roughness.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If conventional thinner compositions are used for edge bead removal, then the photoresist can be removed from edge and rear surfaces, but metal-based contamination is not sufficiently reduced and resist residue remains
Solution Approach 1:
The patent changes the chemical composition parameters of the thinner by incorporating specific metal complexing agents that selectively bind to metal ions in the photoresist, thereby reducing metal-based contamination while maintaining effective edge bead removal capability
Solution Approach 2:
The thinner is formulated as a composite composition containing multiple functional components including metal complexing agents, solvents, and additives that work synergistically to remove edge beads while minimizing metal contamination and resist residue
2Strength
If metal-containing photoresist is used to improve etch resistance, then etch resistance is enhanced, but edge bead removal becomes more difficult and contamination increases
Solution Approach 1:
The patent introduces metal complexing agents as intermediaries that selectively bind to metal ions in the photoresist, facilitating the removal of metal-containing edge beads without compromising the etch resistance of the main photoresist layer
3Manufacturing precision
If photoresist is coated on substrate edge and rear surface during coating process, then complete substrate coverage is achieved, but particles are generated and pattern defects occur in subsequent processes
Solution Approach 1:
The patent applies edge bead removal treatment as a preliminary action before subsequent semiconductor processing steps, removing photoresist from edge and rear surfaces to prevent particle generation and pattern defects in etching and ion implantation processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively removes edge beads, minimizing contamination and defects, and achieves excellent sensitivity and reduced line edge roughness, enabling precise patterning of smaller features.
Implementation Method 1
a polycyclic aliphatic hydrocarbon compound substituted with at least one carboxyl group; and an organic solvent
Implementation Method 2
a composition for removing edge beads from metal-containing resists
Data Source
AI summary
A composition for removing edge beads from metal-containing resists and/or a developer composition of metal-containing resists, and a method of forming patterns using the same are provided. The composition includes a polycyclic aliphatic hydrocarbon compound substituted with at least one carboxyl group; and an organic solvent.