Group 4/14 Element Organic Compounds TRIZ Cases
- Silicon Resist Underlayer Composition for Low-LWR Fine Patterning
A silicon-containing sulfonium salt improves underlayer curing, suppresses diffusion, and balances etch rate with lower LWR and CDU.
- Tin Organometallic Photoresist for Low-LER EUV Patterning
Tin organometallic EUV photoresist with ketone and aromatic additives improves photospeed while limiting line edge roughness and defects.
- Tire Rubber Composition With Terpene Silane for Silica Dispersion
A terpene-skeleton silane plus sulfur silane improves silica dispersion and interface flexibility to balance wet grip, fuel efficiency, and wear.
- Blocked Mercaptosilane Coupling for Tire Rubber Wet Grip
A blocked mercaptosilane with two polymer-reactive groups strengthens silica-polymer bonding to improve tire wet grip, handling, and rolling resistance.
- Organometallic Photoresist Composition for Fine Etch-Resistant Patterns
Light-triggered crosslinking in an organometallic photoresist improves storage stability, etch resistance, and fine pattern precision.
- Edge Bead Removal Composition for Metal-Containing Resists
A carboxyl-substituted polycyclic solvent composition removes metal-resist edge beads while reducing contamination and line edge roughness.
- Lithium Battery Electrolyte Additives for Nickel-Rich Cathode Stability
A silane cathode additive and anode film former build CEI and SEI layers that limit electrolyte breakdown and extend high-capacity battery life.
- Tin Compound Apparatus Cleaning for Stannoxane Residue Removal
A three-step solvent, acid or alkali, and ultrapure water cleaning sequence removes stannoxane residue and preserves tin compound purity.
- Cycloalkyl Silicon Precursor for Low-k Hard Thin Films
An asymmetric cycloalkyl silicon precursor enables PECVD thin films with low dielectric constant, high hardness, thermal stability, and adhesion.
- Dual-Triazole Coupling Agent for Heat-Stable Material Bonding
A dual-triazole coupling agent boosts adhesion between metals, inorganic materials, and resins while resisting heat and alkali.
- Tin-Containing Resist Underlayer Composition for EUV Patterning
A tin-containing polymer underlayer improves EUV patterning by balancing absorbance, film filling, and dry etch resistance after baking.
- Silicon Resist Underlayer Composition for EUV Pattern Adhesion
Hydrolyzed silicon compounds and a crosslinking catalyst improve resist adhesion in positive and negative development while preventing fine EUV pattern collapse.
- Doped Hafnium Oxide Thin Films With Precise ALD Dopant Tuning
Sequential ALD cycles tune dopant levels in hafnium oxide thin films from 1.5 to 9 mol%, enabling strong ferroelectricity in ultra-thin layers.
- Photosensitive Surface Treatment for Photoresist-Free Metal Patterning
A deprotected surface treatment film enables direct fine metal patterning without photoresist or etching, cutting process steps and storage burden.
- Boron-Centered OLED Compound for Higher Efficacy and Lower Voltage
An adamantane-boron organic compound improves carrier stability and host energy transfer, raising OLED efficacy while lowering driving voltage.
- Photosensitive Surface Treatment for Resist-Free Fine Metal Patterning
Light-triggered amine generation enables direct fine metal patterning on substrates without photoresist, development, or etching.