Silicon Resist Underlayer Composition for EUV Pattern Adhesion
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Solution Overview
Problem
The challenge is to develop a silicon-containing resist underlayer film with improved adhesiveness to resist patterns in both negative and positive development processes, particularly for finer patterns in EUV photo-exposure, while preventing pattern collapse.
Innovation Solution
A composition comprising hydrolysis products or hydrolysis condensates of specific silicon compounds, including a mixture of silicon compounds (A-1) and (A-2), along with a crosslinking catalyst, is used to form a silicon-containing resist underlayer film. This composition enhances the adhesiveness to resist patterns and finer EUV patterns by forming chemical bonds between the underlayer film and the upper layer resist.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a conventional resist underlayer film is used, then the pattern formation process can proceed, but the adhesiveness to fine patterns is insufficient leading to pattern collapse
Solution Approach 1:
The patent changes the chemical composition parameters of the resist underlayer film by incorporating specific silicon compounds with hydrolyzable groups and controlled hydrophobic/hydrophilic balance. This modifies the film's surface properties and adhesion characteristics, enabling it to effectively support fine patterns without collapse during development processes.
Solution Approach 2:
The patent creates a composite resist underlayer film by combining silicon compounds with specific functional groups (hydrolyzable groups, organic groups with 1-30 carbon atoms) in defined ratios. This composite structure provides both the mechanical support needed to prevent pattern collapse and the chemical properties required for proper development in both positive and negative tone processes.
2Reliability
If the adhesiveness to resist patterns is improved, then pattern collapse is prevented, but the development process becomes more complex
Solution Approach 1:
The patent designs a multi-functional silicon-containing compound that simultaneously provides: (1) adequate adhesiveness to prevent pattern collapse, (2) compatibility with both positive and negative development processes, and (3) proper surface properties for fine pattern support. This universal underlayer composition eliminates the need for separate optimization for different development types, simplifying the overall process.
3Length of moving object
If the pattern size is miniaturized, then higher integration is achieved, but the patterns become more prone to collapse
Solution Approach 1:
The patent optimizes the local properties of the resist underlayer film at the interface with the patterned resist. By controlling the composition of silicon compounds with specific carbon chain lengths and hydrolyzable groups, the film provides enhanced local mechanical support and adhesion precisely where fine patterns contact the underlayer, preventing collapse while maintaining miniaturization benefits.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents pattern collapse in both negative and positive development processes, maintains favorable surface roughness, and ensures strong adhesiveness to finer EUV patterns, thereby improving the reliability and efficiency of semiconductor device manufacturing.
Implementation Method 1
one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1)
Implementation Method 2
forming chemical bonds between the underlayer film and the upper layer resist
Data Source
AI summary
The present invention is a composition for forming a silicon-containing resist underlayer film, containing one or both of a hydrolysis product and a hydrolysis condensate of one or more silicon compounds (A-1) shown by the following general formula (1). This provides: a composition for forming a silicon-containing resist underlayer film with which it is possible to form a resist underlayer film having favorable adhesiveness to resist patterns regardless of whether in negative development or positive development, and also having favorable adhesiveness to finer patterns as in EUV photo-exposure; a patterning process; and a silicon compound.