Tin-Containing Resist Underlayer Composition for EUV Patterning
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Solution Overview
Problem
Existing resist materials for semiconductor manufacturing face challenges in achieving high sensitivity, low edge roughness, and compatibility with EUV lithography, while also requiring improved film-formability, filling property, and heat resistance for advanced patterning processes.
Innovation Solution
A compound containing a polymer with specific repeating units represented by general formula (P-1) or (P-2) is developed, which generates radicals for crosslinking reactions, enhancing heat resistance and suppressing volume shrinkage, thereby improving film-formability, filling property, and etching resistance, even after high-temperature baking.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Use of energy by moving object
If metal materials are used in resist materials to achieve higher sensitivity and suppress shot noise influence, then EUV light absorbance and photosensitivity improve, but storage stability and sensitivity consistency deteriorate
Solution Approach 1:
The patent uses composite materials by combining metal compounds (such as barium, titanium, hafnium, zirconium, or tin compounds) with organic polymers to create a resist material that achieves both high EUV light absorbance and improved storage stability. The metal compound provides the necessary photosensitivity enhancement while the polymer matrix maintains structural integrity and stability during storage.
2Use of energy by moving object
If metal compounds are used to improve EUV sensitivity, then photosensitivity increases, but film-formability and filling property deteriorate
Solution Approach 1:
The patent applies parameter changes by carefully controlling the concentration and type of metal compounds in the resist formulation. By optimizing these parameters, the material achieves high photosensitivity while maintaining good film-formability and filling properties, resolving the contradiction between sensitivity enhancement and manufacturing quality.
3Manufacturing precision
If conventional organic underlayer film materials are used, then film-formability is acceptable, but dry etching resistance is insufficient
Solution Approach 1:
The patent employs composite materials in the underlayer film by incorporating metal compounds (particularly tin compounds) into the polymer matrix. This composite structure provides both adequate film-formability from the polymer component and enhanced dry etching resistance from the metal compound, simultaneously satisfying both requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound provides a resist underlayer film material with enhanced dry etching resistance, high tin content, and improved film-formability, allowing for precise fine patterning without defects, even in complex structures like miniaturized DRAM.
Implementation Method 1
generates radicals due to radical cleavage of Sn-alkyl bonds
Implementation Method 2
a crosslinking reaction caused by the radicals occurs
Implementation Method 3
A compound that contains a metallic element, such as barium, titanium, hafnium, zirconium, or tin, has a higher absorbance of EUV light compared to an organic material that does not contain metal
Data Source
AI summary
The present invention is a compound for forming a metal-containing film, being a polymer containing one or both of repeating units represented by the following general formula (P-1) or (P-2). This can provide: a compound for forming a metal-containing film having excellent dry etching resistance and also having high film-formability, high filling property, and a high tin content; a composition for forming a metal-containing film containing the compound; and a patterning process in which the composition is used as a resist underlayer film material.