Edge Ring Material Selection for Hardmask Film Modulation
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current hardmask materials used in semiconductor device fabrication lack sufficient etch selectivity and deposition rate as critical dimensions decrease, requiring increased RF power which often compromises film properties such as modulus and stress.
Innovation Solution
A substrate processing chamber with an edge ring made of materials like quartz, silicon, cross-linked polystyrene, polyether ether ketone, Al2O3, or AlN is used to modulate hardmask film properties without scaling up RF power, allowing for independent adjustment of film modulus and stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If RF power is scaled up to improve hardmask film properties, then film modulus is improved, but film stress deteriorates
Solution Approach 1:
The patent changes the dielectric constant parameter of the edge ring material to modulate plasma coupling and independently control film properties. By selecting materials with different dielectric constants (e.g., quartz with lower dielectric constant, AlN with higher dielectric constant), the system can adjust film modulus and stress without changing RF power, thus resolving the trade-off between film modulus and stress
Solution Approach 2:
The edge ring acts as an intermediary component between the plasma source and substrate. It modulates plasma coupling through its dielectric properties, enabling independent control of film deposition parameters. The edge ring material serves as a mediator that translates dielectric constant variations into controlled changes in film modulus and stress without directly affecting RF power
2Manufacturing precision
If current hardmask materials are used with decreasing critical dimensions, then pattern resolution is improved, but etch selectivity and deposition rate deteriorate
Solution Approach 1:
The patent changes the plasma coupling parameters through edge ring material selection, which enables improved deposition rate and etch selectivity while maintaining fine pattern resolution. The modified plasma coupling conditions allow for optimized film deposition characteristics without sacrificing the pattern resolution achieved with fine critical dimensions
3Strength
If RF power is scaled up to improve hardmask film properties, then energy consumption increases
Solution Approach 1:
The patent changes the dielectric constant parameter of the edge ring material to modulate plasma coupling efficiency. This allows the system to achieve desired film modulus improvements through material parameter optimization rather than increasing RF power, thereby reducing energy consumption while maintaining or improving film quality
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the deposition of hardmask films with desired properties without increasing RF power, improving film quality and reducing substrate bowing, thus enhancing precision in semiconductor device manufacturing.
Implementation Method 1
The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber
Implementation Method 2
depositing a first hardmask film on a first substrate and processing the first substrate at a first RF power
Data Source
AI summary
Embodiments of the present disclosure generally relate to a substrate processing chamber, and components thereof, for forming semiconductor devices. The processing chamber comprises a substrate support, and an edge ring is disposed around the substrate support. The edge ring comprises a material selected from the group consisting of quartz, silicon, cross-linked polystyrene and divinylbenzene, polyether ether ketone, Al2O3, and AlN. The material of the edge ring is selected to modulate the properties of hardmask films deposited on substrates in the processing chamber. As such, hardmask films having desired film properties can be deposited in the processing chamber without scaling up the RF power to the chamber.