Electric Discharge Tubes TRIZ Cases

A stepped through-hole anchors the porous body even as adhesion degrades, suppressing abnormal discharge during substrate fixing.

Metamaterial absorbers narrow electron beam energy spread, reducing SEM chromatic aberration while preserving beam current and image resolution.

A common actuator lifts both substrate and shadow ring pins, cutting chamber space, cost, and arcing risk in vacuum processing.

Combining fluorine- and hydrogen-containing gases suppresses arc chamber residue, improving aluminum beam stability and source life.

Fluctuating DC and RF plasma power removes residual substrate charge after chuck release, improving separation and safe handling.

A shuttered communication hole blocks gas entry into the partition wall space, preventing conductive buildup and extending plasma chamber cleaning cycles.

A coaxial closed-loop discharge envelope creates hollow plasma without electrodes, improving radiation transmission and lamp lifespan.

A two-angle focus ring inner surface improves chuck alignment and plasma uniformity, reducing substrate processing deviations.

A magnetic coupler and rotary electrical feedthrough let a semiconductor chuck rotate in high vacuum while preserving RF paths and film thickness uniformity.

Multiple deflectors shift the wobbling center and correct beam tilt to image angled holes and vias with lower aberration and stable resolution.

Angled inner surfaces and controlled ring spacing improve chuck alignment, plasma uniformity, and substrate positioning in semiconductor processing.

Site-specific heating and cooling adjusts wafer etch rates to correct topography variation and improve post-etch planarity.

Adjusting pulsed beam duty ratio by sample tilt keeps dose consistent while shortening acquisition time and limiting drift and beam damage.

Parallel gas channels and a uniform plasma field raise gas output without the concentration loss, cost, and weight of multiple cells.

Reflected-light spectral changes enable real-time endpoint detection for atomic-level plasma etching of high-aspect-ratio multilayer films.

Inductor and diode energy recovery returns load energy to the high-voltage supply, preserving steep nanosecond pulse edges on capacitive loads.

Porous carbon gaps absorb electrons and suppress edge scattering, enabling more accurate electron beam diameter measurement with a Faraday cup.

Multiple in-line measurements feed a layer model to correct vacuum coating deviations in real time and keep multilayer properties uniform.

Front-side illumination above the charge-generation threshold speeds electrostatic clamping and release of insulating and high-resistivity substrates.

By combining self-bias voltage and heat transfer gas pressure, the controller keeps chuck attraction stable and prevents substrate separation.

A curved conductive faceplate reshapes chamber plasma to reduce localized film stress non-uniformity while supporting higher RF deposition rates.

A segmented aluminum-alloy showerhead with a low-conductivity annular liner resists high-temperature creep, cutting residue buildup and wafer defects.

Hot press sintering raises potassium sodium niobate target density above 95% to enable stable sputtering and uniform lead-free film deposition.

A rotating target with pulsed arc discharge and magnetic focusing spreads erosion evenly, preventing target poisoning and stabilizing coating quality.

Certified nanostructures of multiple widths calibrate AFM and SEM scale deviations, improving nanoscale measurement accuracy.

Repeated H2O radical, halogen, and oxygen or nitrogen dosing improves low-temperature film quality and bottom-to-top coverage in deep features.

A PECVD chamber uses perforated showerhead diffusion members and DC substrate bias to reduce position-dependent film stress on large substrates.

Using plasma light as the sensing source, this case detects substrate natural frequency, warpage, and chuck attraction state without external optics.

Rotationally symmetrical coils with shunt capacitors balance current and voltage distribution to improve plasma uniformity and reduce CCP damage.

A temperature-controlled Faraday shield stabilizes plasma uniformity under varying gas conditions while reducing cold starts and particulates.

Stored correction tables reuse prior imaging adjustments at wafer measurement points to cut autofocus time and raise overlay metrology throughput.

Aligned upper and lower gaps in a process chamber pump liner balance gas flow and heat loss to improve wafer film uniformity.

Embedded serpentine channels in a sintered ceramic power window improve thermal uniformity, resist plasma erosion, and reduce contaminants.

Plasma-assisted silicon precursor cycles form conformal silicon oxide layers at low temperature while improving wet etch resistance and leakage.

Laser absorption sensing tracks radical species in real time so plasma parameters can be corrected for chamber drift and consistent substrate processing.

Using an SPS-made electrode, electro-spark deposition forms adherent HE-UHTC coatings that resist wear, oxidation, and 2500°C heat.

Two resonant RF cavities with a 90° phase shift correct electron energy spread, enabling sub-eV TEM beams without high-voltage acceleration.

Atmospheric plasma cleaning removes organics and oxide films on flexible substrates while water cooling limits roller heating and substrate damage.

Electrophoretic deposition forms cleaner carbon nanotube-metal cathode films with better adhesion, conductivity, and longer emission life.

Ultraviolet photoemission adds free electrons for faster, more reliable ICP ignition at lower RF power, reducing arcing and contamination.

Dual-magnet compensation and RF grounding loops improve tantalum barrier coverage in deep TSVs without sacrificing throughput.

A refractory metal arc chamber and graphite slit member reduce wear and discharge contamination while stabilizing high-purity ion generation.

Two-stage channel calibration corrects detector, circuit, and scintillator variation plus dark-current noise for more accurate 3D SEM measurement.

Superposed magnetic fields reshape plasma density in magnetron sputtering to improve sputter rate, target erosion uniformity, and anisotropy control.

Real-time detector feedback blanks the electron beam after enough events, reducing sample damage without sacrificing signal quality.

Precision holding surfaces and tubular insulators cut cooling gas leakage, enabling stable focus ring cooling and wafer temperature uniformity.

Measuring individual beam positions at multiple heights reveals SAA angle deviations, helping exclude distorted beams and improve writing accuracy.

UV-pretreated reusable masks enable selective Parylene plasma ashing with less waste, faster processing, and better batch automation.

A ferrite block in the chamber lid stack reshapes RF current to suppress standing waves, improving plasma uniformity at higher deposition rates.

Resonant optical modes and Fourier-transformed EELS sidebands enable precise electron spectrometer calibration and non-linearity correction.