Ferrite Lid Stack for Uniform High-Frequency Plasma Deposition
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Solution Overview
Problem
Conventional semiconductor processing chambers face challenges in achieving uniform deposition of materials at higher frequencies due to non-uniform plasma distribution caused by standing wave effects, leading to reduced deposition rates and increased fabrication costs in complex structures like 3D NAND stacks.
Innovation Solution
Incorporating a ferrite block within the processing chamber, positioned between the lid plate and the gasbox, which modulates the RF current and redistributes the plasma flux more uniformly, reducing plasma voltage effects and improving deposition uniformity at higher frequencies.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If higher frequency power is used in plasma processing, then deposition rates increase, but plasma distribution becomes non-uniform due to standing wave effects
Solution Approach 1:
A dielectric material is introduced as an intermediary component positioned between the RF power source and the plasma generation region. This dielectric layer mediates the interaction between RF power and plasma, modifying the electromagnetic field distribution to eliminate standing wave effects while maintaining high frequency operation, thereby achieving both high deposition rates and uniform plasma distribution
Solution Approach 2:
The dielectric constant of the material between the RF source and plasma region is changed by introducing a dielectric material with specific electrical properties. This parameter change modifies the RF field penetration and distribution characteristics, suppressing standing wave formation and enabling uniform plasma generation at higher frequencies
2Quantity of substance
If conventional plasma enhancement methods are used, then material reactivity increases, but deposition uniformity deteriorates
Solution Approach 1:
The dielectric material serves as an intermediary that decouples the relationship between RF power application and plasma generation. It allows plasma enhancement to occur while preventing the standing wave effects that cause non-uniformity, thereby maintaining both high reactivity and uniform deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for higher frequency power usage in plasma processing, enhancing deposition uniformity and increasing deposition rates while maintaining the integrity of material layers, thus reducing fabrication costs and improving the quality of semiconductor structures.
Implementation Method 1
the ferrite block may be characterized by an annular shape extending about the central aperture of the gasbox... the ferrite block modulates the RF current and redistributes the plasma flux more uniformly
Implementation Method 2
The dielectric material may be characterized by a dielectric constant below or about 3.7... the dielectric material reduces standing wave effects
Implementation Method 3
The ferrite block may be or include a plurality of blocks extending about the gasbox... the ferrite block modulates the RF current
Data Source
AI summary
Exemplary semiconductor processing chambers may include a substrate support positioned within a processing region of the semiconductor processing chamber. The chamber may include a lid plate. The chamber may include a gasbox positioned between the lid plate and the substrate support. The gasbox may be characterized by a first surface and a second surface opposite the first surface. The gasbox may define a central aperture. The gasbox may define an annular channel in the first surface of the gasbox extending about the central aperture through the gasbox. The gasbox may include an annular cover extending across the annular channel defined in the first surface of the gasbox. The chamber may include a blocker plate positioned between the gasbox and the substrate support. The chamber may include a ferrite block positioned between the lid plate and the blocker plate.